Patents by Inventor Armin Dadgar

Armin Dadgar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12376424
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Grant
    Filed: October 4, 2022
    Date of Patent: July 29, 2025
    Assignee: Allos Semiconductors GmbH
    Inventors: Armin Dadgar, Alois Krost
  • Patent number: 12364059
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Grant
    Filed: October 4, 2022
    Date of Patent: July 15, 2025
    Assignee: Allos Semiconductors GmbH
    Inventors: Armin Dadgar, Alois Krost
  • Patent number: 12272761
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Grant
    Filed: October 4, 2022
    Date of Patent: April 8, 2025
    Assignee: Azur Space Solar Power GmbH
    Inventors: Armin Dadgar, Alois Krost
  • Patent number: 12125938
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Grant
    Filed: July 4, 2016
    Date of Patent: October 22, 2024
    Assignee: AZUR SPACE Solar Power GmbH
    Inventors: Armin Dadgar, Alois Krost
  • Patent number: 11870220
    Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
    Type: Grant
    Filed: July 19, 2022
    Date of Patent: January 9, 2024
    Assignees: Otto-von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbH
    Inventors: Armin Dadgar, André Strittmatter
  • Publication number: 20230360908
    Abstract: The disclosure relates to a method for growing a semiconductor assembly. The method includes the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crystal quality than in known methods. The disclosure further relates to a semiconductor assembly that is produced accordingly.
    Type: Application
    Filed: August 17, 2021
    Publication date: November 9, 2023
    Inventors: Armin DADGAR, Florian HÖRICH
  • Publication number: 20230134459
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Application
    Filed: October 4, 2022
    Publication date: May 4, 2023
    Applicant: AZUR SPACE Solar Power GmbH
    Inventors: Armin DADGAR, Alois KROST
  • Publication number: 20230041323
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Application
    Filed: October 4, 2022
    Publication date: February 9, 2023
    Applicant: AZUR SPACE Solar Power GmbH
    Inventors: Armin DADGAR, Alois KROST
  • Publication number: 20230039863
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Application
    Filed: October 4, 2022
    Publication date: February 9, 2023
    Applicant: AZUR SPACE Solar Power GmbH
    Inventors: Armin DADGAR, Alois KROST
  • Publication number: 20230028392
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Application
    Filed: October 4, 2022
    Publication date: January 26, 2023
    Applicant: AZUR SPACE Solar Power GmbH
    Inventors: Armin DADGAR, Alois KROST
  • Publication number: 20220368110
    Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
    Type: Application
    Filed: July 19, 2022
    Publication date: November 17, 2022
    Applicants: OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG, AZUR SPACE SOLAR POWER GMBH
    Inventors: Armin DADGAR, André STRITTMATTER
  • Patent number: 11424596
    Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: August 23, 2022
    Assignees: Otto-von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbH
    Inventors: Armin Dadgar, André Strittmatter
  • Patent number: 11097125
    Abstract: A micro-electrode array (1) comprising a flexible substrate (2) and a multiplicity of electrodes (3) for electrically measuring neural activity is described. The electrodes (3) are arranged on the substrate (2), project from the plane of the substrate (2) and have a core (4). A plurality of measurement lines (9) that are electrically insulated from one another are arranged around the core (4). Adjacent to the end surface (7) of the core (4), at the end of the electrodes (3) there are a plurality of electrode surfaces (8) arranged in a manner distributed spatially around the end surface (7), said electrode surfaces in each case being electrically conductively connected to an associated measurement line (9). The micro-electrode array (1) is passivated with a polymer-containing material, such as e.g. polyimide, such that only the electrodes (3) electrically contact neural tissue with their electrode surfaces (8, E1, E2).
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: August 24, 2021
    Assignees: LEIBNIZ-INSTITUT FUER NEUROBIOLOGIE MAGDEBURG, OTTO-VON-GUERICKE UNIVERSITAT MAGDEBURG
    Inventors: Martin Deckert, Michael Lippert, Bertram Schmidt, Frank Ohl, Armin Dadgar
  • Publication number: 20210119419
    Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.
    Type: Application
    Filed: December 28, 2020
    Publication date: April 22, 2021
    Applicants: OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG, AZUR SPACE SOLAR POWER GMBH
    Inventors: Armin DADGAR, André STRITTMATTER
  • Patent number: 10673207
    Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: June 2, 2020
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Armin Dadgar, André Strittmatter, Christoph Berger
  • Publication number: 20190091483
    Abstract: A micro-electrode array (1) comprising a flexible substrate (2) and a multiplicity of electrodes (3) for electrically measuring neural activity is described. The electrodes (3) are arranged on the substrate (2), project from the plane of the substrate (2) and have a core (4). A plurality of measurement lines (9) that are electrically insulated from one another are arranged around the core (4). Adjacent to the end surface (7) of the core (4), at the end of the electrodes (3) there are a plurality of electrode surfaces (8) arranged in a manner distributed spatially around the end surface (7), said electrode surfaces in each case being electrically conductively connected to an associated measurement line (9). The micro-electrode array (1) is passivated with a polymer-containing material, such as e.g. polyimide, such that only the electrodes (3) electrically contact neural tissue with their electrode surfaces (8, E1, E2).
    Type: Application
    Filed: March 13, 2017
    Publication date: March 28, 2019
    Inventors: Martin DECKERT, Michael LIPPERT, Bertram SCHMIDT, Frank OHL, Armin DADGAR
  • Publication number: 20180166854
    Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and —a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein —the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and —the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.
    Type: Application
    Filed: June 2, 2016
    Publication date: June 14, 2018
    Inventors: Armin DADGAR, André STRITTMATTER, Christoph BERGER
  • Publication number: 20180130927
    Abstract: The invention relates to a component having a transparent conductive nitride layer, characterized by a layer in the AlGaInN system and a doping with a flat donor above a concentration of 5×1019 cm?3.
    Type: Application
    Filed: June 4, 2016
    Publication date: May 10, 2018
    Inventors: Armin DADGAR, Axel HOFFMANN, Christian NENSTIEL, André STRITTMATTER
  • Publication number: 20170025564
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Application
    Filed: July 4, 2016
    Publication date: January 26, 2017
    Inventors: Armin Dadgar, Alois Krost
  • Patent number: 9406505
    Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: August 2, 2016
    Assignee: ALLOS SEMICONDUCTORS GMBH
    Inventors: Armin Dadgar, Alois Krost