Patents by Inventor Armin Dadgar
Armin Dadgar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12376424Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: GrantFiled: October 4, 2022Date of Patent: July 29, 2025Assignee: Allos Semiconductors GmbHInventors: Armin Dadgar, Alois Krost
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Patent number: 12364059Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: GrantFiled: October 4, 2022Date of Patent: July 15, 2025Assignee: Allos Semiconductors GmbHInventors: Armin Dadgar, Alois Krost
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Patent number: 12272761Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: GrantFiled: October 4, 2022Date of Patent: April 8, 2025Assignee: Azur Space Solar Power GmbHInventors: Armin Dadgar, Alois Krost
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Patent number: 12125938Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: GrantFiled: July 4, 2016Date of Patent: October 22, 2024Assignee: AZUR SPACE Solar Power GmbHInventors: Armin Dadgar, Alois Krost
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Patent number: 11870220Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.Type: GrantFiled: July 19, 2022Date of Patent: January 9, 2024Assignees: Otto-von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbHInventors: Armin Dadgar, André Strittmatter
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Publication number: 20230360908Abstract: The disclosure relates to a method for growing a semiconductor assembly. The method includes the steps of providing a silicon substrate and growing two metal nitride layers, each metal nitride layer being grown by means of a metal target and a plasma. For the second metal nitride layer a higher hydrogen content is used, allowing for better crystal quality than in known methods. The disclosure further relates to a semiconductor assembly that is produced accordingly.Type: ApplicationFiled: August 17, 2021Publication date: November 9, 2023Inventors: Armin DADGAR, Florian HÖRICH
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Publication number: 20230134459Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: ApplicationFiled: October 4, 2022Publication date: May 4, 2023Applicant: AZUR SPACE Solar Power GmbHInventors: Armin DADGAR, Alois KROST
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Publication number: 20230041323Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: ApplicationFiled: October 4, 2022Publication date: February 9, 2023Applicant: AZUR SPACE Solar Power GmbHInventors: Armin DADGAR, Alois KROST
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Publication number: 20230039863Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: ApplicationFiled: October 4, 2022Publication date: February 9, 2023Applicant: AZUR SPACE Solar Power GmbHInventors: Armin DADGAR, Alois KROST
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Publication number: 20230028392Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: ApplicationFiled: October 4, 2022Publication date: January 26, 2023Applicant: AZUR SPACE Solar Power GmbHInventors: Armin DADGAR, Alois KROST
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Publication number: 20220368110Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.Type: ApplicationFiled: July 19, 2022Publication date: November 17, 2022Applicants: OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG, AZUR SPACE SOLAR POWER GMBHInventors: Armin DADGAR, André STRITTMATTER
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Patent number: 11424596Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.Type: GrantFiled: December 28, 2020Date of Patent: August 23, 2022Assignees: Otto-von-Guericke-Universitaet Magdeburg, AZUR SPACE Solar Power GmbHInventors: Armin Dadgar, André Strittmatter
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Patent number: 11097125Abstract: A micro-electrode array (1) comprising a flexible substrate (2) and a multiplicity of electrodes (3) for electrically measuring neural activity is described. The electrodes (3) are arranged on the substrate (2), project from the plane of the substrate (2) and have a core (4). A plurality of measurement lines (9) that are electrically insulated from one another are arranged around the core (4). Adjacent to the end surface (7) of the core (4), at the end of the electrodes (3) there are a plurality of electrode surfaces (8) arranged in a manner distributed spatially around the end surface (7), said electrode surfaces in each case being electrically conductively connected to an associated measurement line (9). The micro-electrode array (1) is passivated with a polymer-containing material, such as e.g. polyimide, such that only the electrodes (3) electrically contact neural tissue with their electrode surfaces (8, E1, E2).Type: GrantFiled: March 13, 2017Date of Patent: August 24, 2021Assignees: LEIBNIZ-INSTITUT FUER NEUROBIOLOGIE MAGDEBURG, OTTO-VON-GUERICKE UNIVERSITAT MAGDEBURGInventors: Martin Deckert, Michael Lippert, Bertram Schmidt, Frank Ohl, Armin Dadgar
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Publication number: 20210119419Abstract: A semiconductor layer stack, a component made therefrom, a component module, and a production method is provided. The semiconductor layer stack has at least two layers (A, B), which, as individual layers, each have an energy position of the Fermi level in the semiconductor band gap, E F - E V < E G 2 applying to the layer (A) and E L - E F < E G 2 applying to the layer (B), with EF the energy position of the Fermi level, EV the energy position of the valence band, EL the energy position of a conduction band and EL?EV the energy difference of the semiconductor band gap EG, the thickness of the layers (A, B) being selected in such a way that a continuous space charge zone region over the layers (A, B) results.Type: ApplicationFiled: December 28, 2020Publication date: April 22, 2021Applicants: OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG, AZUR SPACE SOLAR POWER GMBHInventors: Armin DADGAR, André STRITTMATTER
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Patent number: 10673207Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.Type: GrantFiled: June 2, 2016Date of Patent: June 2, 2020Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Armin Dadgar, André Strittmatter, Christoph Berger
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Publication number: 20190091483Abstract: A micro-electrode array (1) comprising a flexible substrate (2) and a multiplicity of electrodes (3) for electrically measuring neural activity is described. The electrodes (3) are arranged on the substrate (2), project from the plane of the substrate (2) and have a core (4). A plurality of measurement lines (9) that are electrically insulated from one another are arranged around the core (4). Adjacent to the end surface (7) of the core (4), at the end of the electrodes (3) there are a plurality of electrode surfaces (8) arranged in a manner distributed spatially around the end surface (7), said electrode surfaces in each case being electrically conductively connected to an associated measurement line (9). The micro-electrode array (1) is passivated with a polymer-containing material, such as e.g. polyimide, such that only the electrodes (3) electrically contact neural tissue with their electrode surfaces (8, E1, E2).Type: ApplicationFiled: March 13, 2017Publication date: March 28, 2019Inventors: Martin DECKERT, Michael LIPPERT, Bertram SCHMIDT, Frank OHL, Armin DADGAR
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Publication number: 20180166854Abstract: The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and —a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein —the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and —the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.Type: ApplicationFiled: June 2, 2016Publication date: June 14, 2018Inventors: Armin DADGAR, André STRITTMATTER, Christoph BERGER
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Publication number: 20180130927Abstract: The invention relates to a component having a transparent conductive nitride layer, characterized by a layer in the AlGaInN system and a doping with a flat donor above a concentration of 5×1019 cm?3.Type: ApplicationFiled: June 4, 2016Publication date: May 10, 2018Inventors: Armin DADGAR, Axel HOFFMANN, Christian NENSTIEL, André STRITTMATTER
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Publication number: 20170025564Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: ApplicationFiled: July 4, 2016Publication date: January 26, 2017Inventors: Armin Dadgar, Alois Krost
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Patent number: 9406505Abstract: A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising: provision of a substrate having a silicon surface; deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate; optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer; deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer; deposition of a gallium-containing first nitride semiconductor layer on the masking layer, wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 ?m2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.Type: GrantFiled: December 20, 2006Date of Patent: August 2, 2016Assignee: ALLOS SEMICONDUCTORS GMBHInventors: Armin Dadgar, Alois Krost