Abstract: The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.

Abstract: The invention relates to a process for producing a semiconductor wafer by simultaneous polishing of a front surface and a back surface of the semiconductor wafer with a polishing fluid between rotating polishing plates during a polishing run which lasts for a polishing time, the semiconductor wafer being located in a cutout in a carrier having a defined carrier thickness and being held on a defined geometric path, the semiconductor wafer having a starting thickness prior to polishing and a final thickness after polishing. The polishing time for the polishing run is calculated from data which include the starting thickness of the semiconductor wafer and the carrier thickness as well as the starting thickness and final thickness and the flatness of a semiconductor wafer which was polished during a polishing run preceding the present polishing run.