Abstract: A method for the production of a disk-shaped silicon semiconductor component with at least two adjoining zones of opposite type conductivity and different doping strengths using a lapping disk which includes the steps of positioning and semi-conductor component adjacent the lapping disk, subjecting the semiconductor disk to a suction pressure on its side opposite the lapping disk so as to be bowed up from an initial lapping plane with a radius of curvature corresponding to a desired angle, lapping the semiconductor disk with the rotating lapping disk and beveling off the bounding surface of the semiconductor disk opposite the plane of a pn-junction separating the two zones.