Abstract: The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology.

Abstract: The present invention provides a radiation sensor (104) that has a plurality of sensor elements, wherein each sensor element has a photoelectric detection portion and an integrated current to frequency converter for a built-in analog digital conversion of an acquired analog signal being indicative of an intensity of electromagnetic radiation impinging on the photoelectric detection part. Typically, the detector element corresponds to a pixel of a light detector, such as a photodiode. Preferably, the current to frequency converter as well as the photoelectric conversion portion are arranged besides one another on a common substrate and are implemented on the basis of CMOS technology allowing for a costs efficient mass production of the radiation sensor.

Abstract: A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator (20 to 29) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter (20 to 30), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.

Abstract: Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate.

Abstract: An optical detection device for detecting an intensity of a light beam in a detection window and for detecting data transmitted by the light beam includes a first detection diode and an array of at least two second detection diodes in a detection window. In addition, provision is made for a first readout circuit connectable to the first detection diode, for reading out the first detection diode at a first readout speed to detect the data, and for a second readout circuit connectable to the second detection diodes, for reading out the second detection diodes at a second readout speed smaller than the first readout speed, so as to detect the intensity of the light beam.

Abstract: An optical detection device for detecting an intensity of a light beam in a detection window and for detecting data transmitted by the light beam includes a first detection diode and an array of at least two second detection diodes in a detection window. In addition, provision is made for a first readout circuit connectable to the first detection diode, for reading out the first detection diode at a first readout speed to detect the data, and for a second readout circuit connectable to the second detection diodes, for reading out the second detection diodes at a second readout speed smaller than the first readout speed, so as to detect the intensity of the light beam.

Abstract: Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate.

Abstract: The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) being electrically connected to one another by means of leads (6) and to a collecting lead (4). The dot zones (7) form parallel connected semiconductor diodes whereby minority charge carriers that are generated by the incidence of light in the channel region can be detected after having traveled to the dot zones (7) by diffusion. The described arrangement enables a high sensitivity to be achieved throughout the channel region and also a minimum capacitance of the semiconductor constructed by means of the CMOS technique. Diffusion of charge carriers out of a pixel is prevented by a guard ring (3) of an opposed type of doping.

Abstract: The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) being electrically connected to one another by means of leads (6) and to a collecting lead (4). The dot zones (7) form parallel connected semiconductor diodes whereby minority charge carriers that are generated by the incidence of light in the channel region can be detected after having traveled to the dot zones (7) by diffusion. The described arrangement enables a high sensitivity to be achieved throughout the channel region and also a minimum capacitance of the semiconductor constructed by means of the CMOS technique. Diffusion of charge carriers out of a pixel is prevented by a guard ring (3) of an opposed type of doping.