Abstract: A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.

Abstract: An absolute position measurement system includes a multipole magnet including alternating magnetic poles extending along a multipole extension direction, the multipole magnet has a linear changing configuration relative to a linear path and produces a magnetic field having a field strength that undergoes a sinusoidal change along the linear path due to the alternating magnetic poles and a linear change along the linear path according to the linear changing configuration relative to the linear path; and a magnetic sensor configured to move along the linear path. The magnetic sensor includes a first sensor element arrangement configured to generate a first sensor signal, a second sensor element arrangement configured to generate a second sensor signal that is phase shifted with respect to the first sensor signal, and a processing circuit configured to calculate an absolute position of the magnetic sensor based on the first sensor signal and the second sensor signal.

Abstract: A position sensor system comprises a magnetic strip extending in a readout direction and comprising magnetic poles alternating at a constant pitch along the readout direction. At least a first differential magnetoresistive sensor comprises magnetoresistive sensing elements spaced at the pitch. The magnetic poles of the magnetic strip and the first differential magnetoresistive sensor are movable with respect to each other in the readout direction.

Abstract: The described techniques facilitate the use of a magnetic field sensor that implements the same magnetic layer stack for the detection of the x, y, and z components of an external magnetic field. The sensor advantageously is insensitive to orthogonal stray fields and operates with a reduced offset compared to conventional magnetic field sensors. The linear regime implemented by the sensor to facilitate magnetic field detection may also be adjusted per application by tuning the current strength.

Abstract: An apparatus for generating magnetic vortex spin structures includes a device for moving at least one magnetic domain wall in a magnetic domain wall channel structure; and a device for generating and storing at least one magnetic vortex spin structure in response to the magnetic domain wall moved in the domain wall channel structure.

Abstract: An integrated Hall sensor device for measuring a magnetic field is provided. The integrated Hall sensor device includes: a semiconductor chip; a first Hall sensor for generating a first magnetic field measurement signal dependent on a first component; a second Hall sensor for generating a second magnetic field measurement signal dependent on a second component of the magnetic field; a first stress sensor for generating a shear stress measurement signal dependent on mechanical stresses in the semiconductor chip; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, the second magnetic field measurement signal. and the first shear stress measurement signal.

Abstract: Magnetic position sensors, systems and methods are disclosed. In an embodiment, a position sensing system includes a magnetic field source; and a sensor module spaced apart from the magnetic field source, at least one of the magnetic field source or the sensor module configured to move relative to the other along a path, the sensor module configured to determine a position of the magnetic field source relative to the sensor module from a nonlinear function of a ratio of a first component of a magnetic field of the magnetic field source to a second component of the magnetic field of the magnetic field source.

Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.

Abstract: A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.

Abstract: A magnetoresistive sensor includes a magnetic reference layer. The magnetic reference layer includes a permanent closed flux magnetization pattern of a predetermined rotational direction. Furthermore, the magnetoresistive sensor includes a magnetic free layer. The magnetic free layer has a total lateral area that is smaller than a total lateral area of the magnetic reference layer. A centroid of the magnetic free layer is laterally displaced with respect to a centroid of the magnetic reference layer.

Abstract: An angle sensor for detecting a rotation angle of a shaft, on the axial end of which a permanent magnet is fitted. The permanent magnet has a north pole and a south pole that lie opposite one another across a rotation axis of the shaft. A sensor arrangement includes at least four sensor elements that are arranged with equidistant angles between them on a sensor element circle. The ferromagnetic element is arranged concentrically with a center of the sensor element circle and, when viewed in the direction of the midaxis of the sensor element circle, is point-symmetrical with respect to the center. The angle sensor is arranged relative to the axial end of the shaft such that the rotation axis of the shaft is substantially concentric with the center of the sensor element circle and the sensor arrangement is arranged between the permanent magnet and the ferromagnetic element.

Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

Abstract: A magnetic sensor device for determining a rotation speed, a direction of rotation, and/or a rotation angle of a magnetic component rotating about a rotation axis is provided. The magnetic sensor device includes a magnet being rotationally symmetrical with respect to a symmetry axis, wherein a recess is formed within the magnet along the symmetry axis. Further, the magnetic sensor device includes a first magnetic sensor element arranged within the recess and on the symmetry axis, and a second magnetic sensor element arranged within the recess and on the symmetry axis. The magnetic sensor device additionally includes an integrated circuit arranged within the recess and configured to determine the rotation speed, the direction of rotation, and/or the rotation angle of the magnetic component based on a first output signal of the first magnetic sensor element and a second output signal of the second magnetic sensor element.

Abstract: Magnetic position sensors, systems and methods are disclosed. In an embodiment, a position sensing system includes a magnetic field source; and a sensor module spaced apart from the magnetic field source, at least one of the magnetic field source or the sensor module configured to move relative to the other along a path, the sensor module configured to determine a position of the magnetic field source relative to the sensor module from a nonlinear function of a ratio of a first component of a magnetic field of the magnetic field source to a second component of the magnetic field of the magnetic field source.

Abstract: A magnetic sensor includes a bridge circuit including a plurality of magnetic field sensor elements, each configured to generate a sensor signal in response to the magnetic field impinging thereon, where the bridge circuit is configured to generate a differential signal based on sensor signals generated by the plurality of magnetic field sensor elements. The bridge circuit further includes a plurality of resistors, where at least one resistor of the plurality of resistors is coupled in parallel to each of the plurality of magnetic field sensor elements.

Abstract: Magnetic position sensors, systems and methods are disclosed. In an embodiment, a position sensing system includes a magnetic field source; and a sensor module spaced apart from the magnetic field source, at least one of the magnetic field source or the sensor module configured to move relative to the other along a path, the sensor module configured to determine a position of the magnetic field source relative to the sensor module from a nonlinear function of a ratio of a first component of a magnetic field of the magnetic field source to a second component of the magnetic field of the magnetic field source.

Abstract: An integrated Hall sensor device for measuring a magnetic field is provided. The integrated Hall sensor device includes: a semiconductor chip; a first Hall sensor for generating a first magnetic field measurement signal dependent on a first component; a second Hall sensor for generating a second magnetic field measurement signal dependent on a second component of the magnetic field; a first stress sensor for generating a shear stress measurement signal dependent on mechanical stresses in the semiconductor chip; and an evaluation device for determining one or more properties of the magnetic field depending on the first magnetic field measurement signal, the second magnetic field measurement signal. and the first shear stress measurement signal.

Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.

Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.

Abstract: A sensor module may include a magnet with a magnetization in a first direction, and a sensor chip including a first sensing element and a second sensing element arranged on a plane defined by the sensor chip. The first direction may be substantially parallel to the main surface of the sensor chip. The first sensing element and the second sensing element may be sensitive to an in-plane component of a magnetic field along the first direction or may be sensitive to an in-plane component of the magnetic field perpendicular to the first direction. The first sensing element and the second sensing element may be positioned beyond an edge of the magnet along the first direction such that the first sensing element and the second sensing element protrude past the edge of the magnet along the first direction.