Abstract: A final mask layout (20?) is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout (20?) with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout (100), firstly a modified auxiliary mask layout (100?) is formed by arranging at least one optically non-resolvable auxiliary structure (130) between two mask structures (110, 120) of the provisional auxiliary mask layout (100). The optically non-resolvable auxiliary structure (130) is positioned between the two mask structures (110, 120) in a manner dependent on the structure size (B1, B2) of the two mask structures, (110, 120). An eccentric offset (V) of the optically non-resolvable auxiliary structure (130) between the two mask structures is effected in the case of differing structure sizes (?B) of the two mask structures.

Abstract: A method for optimizing the geometry of structural elements of a circuit pattern involves providing an overall circuit pattern of the circuit design and a plurality of basic patterns. Subsequently, the circuit pattern of the circuit design is iteratively decomposed into corresponding basic patterns in order to classify those parts of the circuit pattern of the plurality of structural elements wherein there exists a match with the basic pattern. Subsequently, further basic patterns are determined for those parts of the circuit pattern which were not previously classified. After applying a specification for optimizing the geometry of the structural elements, the optimized basic patterns are inserted into the circuit design thus achieving an improvement of the optical imaging properties.

Abstract: In a method for producing a final mask layout for a mask, a provisional auxiliary mask layout is generated in accordance with an electrical circuit diagram. The provisional mask layout includes a main structure that extends in a longitudinal direction. The provisional auxiliary mask layout is converted into a final mask layout with the aid of an OPC method. The converting includes associating at least one optically non-resolvable auxiliary structure with the main structure, wherein the at least one optically non-resolvable auxiliary structure has a longitudinal direction that extends obliquely with respect to the longitudinal direction of the main structure.

Abstract: A final mask layout (20?) is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout (20?) with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout (100), firstly a modified auxiliary mask layout (100?) is formed by arranging at least one optically non-resolvable auxiliary structure (130) between two mask structures (110, 120) of the provisional auxiliary mask layout (100). The optically non-resolvable auxiliary structure (130) is positioned between the two mask structures (110, 120) in a manner dependent on the structure size (B1, B2) of the two mask structures, (110, 120). An eccentric offset (V) of the optically non-resolvable auxiliary structure (130) between the two mask structures is effected in the case of differing structure sizes (?B) of the two mask structures.

Abstract: A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Abstract: A method for producing a final mask layout avoids imaging errors. A provisional auxiliary mask layout that has been produced in accordance with a predetermined electrical circuit diagram is converted into the final mask layer with the aid of an OPC method. Before the OPC method is carried out, a modified auxiliary mask layout is formed with the provisional auxiliary mask layout by a procedure in which, in a first modification step, the mask structures of the provisional auxiliary mask layout are enlarged or reduced in size to form altered mask structures in accordance with a predetermined set of rules. Then the altered mask structures are supplemented, in accordance with predetermined positioning rules, by optically non-resolvable auxiliary structures to form the modified auxiliary mask layout. The mask layout is produced by the OPC method using the modified auxiliary mask layout.

Abstract: A method for producing for a mask a mask layout which avoids aberrations in which a provisional auxiliary mask layout produced, in particular in accordance with a prescribed electrical circuit diagram is converted into the mask layout with the aid of an OPC method. At least two different OPC variants are used in the course of the OPC method by subdividing the original auxiliary mask layout into at least two layout areas and processing each of the layout areas in accordance with one of the at least two OPC variants.

Abstract: An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.

Abstract: A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.

Abstract: A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Abstract: An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.

Abstract: A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.