Abstract: An apparatus for removing photo-resist. The apparatus comprises carriers for carrying a wafer, hot plates to remove residue solvent on the wafer, a cooling plate to decrease the wafer temperature, an reverse unit to turn over the wafer, a development unit to develop and remove photo-resist on the wafer, a top scrubbing unit to clean a top side of the wafer, and a back scrubbing unit to clean a back side of the wafer.

Abstract: A method of removing photo-resist. Acetone, thinner, and deionized water for scrubbing a wafer are used to clean a wafer on which a photo-resist layer is formed, so that thinner and deionized water are mutually dissolvable with acetone as medium. The photo-resist layer is then removed.

Abstract: The invention provides a method of avoiding peeling on the wafer edge and the mark number. The method uses a design rule to expose the multi-layer on a wafer. The limit and the scope of the exposed distance are taken to ensure the polysilicon layers and the metal layers are covered by the dielectric layer after exposure. The polysilicon layers or the metal layers don't unclothe from the overlarge distance at the exposed dielectric layer, so the next structure formed on the exposed dielectric layer doesn't peeling from contacting with the polysilicon layer or the metal layer. The invention avoids to contaminate the wafer and the machine after the particles forming from peeling.

Abstract: A method of forming a metallurgy system on a semiconductor substrate is provided. A first conformal layer of SiO.sub.2 is deposited on the substrate using plasma enhanced chemical vapor deposition (PECVD) techniques. Subsequently a non-conformal organic layer is deposited by spin-on-glass (SOG) techniques over the first layer, and heated to smoothen the surface. The organic SOG deposited layer is then subjected to a N.sub.2 plasma environment and a second conformal layer of SiO.sub.2 is deposited, and then vias etched through the layers. The resist layer used to define vias is removed by an O.sub.2 plasma and the device metallurgy completed.