Abstract: An optoelectronic device includes a display, including a first substrate, which is transparent to optical radiation at a given wavelength, and a first array of display cells including pixel circuit elements disposed on the first substrate at a first pitch, with gaps of a predefined size between the pixel circuit elements. An emitter array includes a second substrate, parallel and in proximity to the first substrate, and a second array of emitters, which are disposed on the second substrate at a second pitch that is different from the first pitch, and which are configured to emit optical radiation at the given wavelength toward the first substrate. Control circuitry is configured to identify the emitters that are aligned with the gaps between the pixel circuit elements and to selectively drive the identified emitters to emit the optical radiation through the gaps.

Abstract: An optoelectronic device includes a silicon interposer and an array of resonant cavity mesas. The array of resonant cavity mesas is monolithically integrated in a set of one or more epitaxial layers and flip-chip bonded to the silicon interposer. The array of resonant cavity mesas includes a first subset of resonant cavity mesas connected to a first subset of conductors of the silicon interposer and biased to a first electrical polarity, and a second subset of resonant cavity mesas connected to a second subset of conductors of the silicon interposer. The second subset of resonant cavity mesas provides electrostatic discharge (ESD) protection for the first subset of resonant cavity mesas.

Abstract: An image sensor may include a plurality of pixels, each of which may include a photodiode having a charge accumulation region (“PD”), a floating diffusion region (“FD”), and a charge transfer region vertically between the PD and FD. The vertical charge transfer region may include a first charge modulation region (“P1”), a second charge modulation region (“P2”), and a third charge modulation region (“P3”). The image sensor may operate in a global shutter mode, in which the P2 may be used as an in-pixel charge memory region to temporarily store charge during transfer of the charge from PD to FD via P1, P2, and P3.

Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

Abstract: Disclosed herein are electronic devices that include arrays of dual function light transmit and receive pixels. The pixels of such arrays include a photodetector (PD) structure and a vertical-cavity, surface-emitting laser (VCSEL) diode, both formed in a common stack of epitaxial semiconductor layers. The pixels of the array may be configured by a controller or processor to function either as a light emitter by biasing the VCSEL diode, or as a light detector or receiver by a different bias applied to the PD structure, and this functionality may be altered in time. The array of dual function pixels may be positioned interior to an optical display of an electronic device, in some cases to provide depth sensing or autofocus. The array of pixels may be registered with a camera of an electronic device, such as to provide depth sensing or autofocus.

Abstract: An integrated emitter device incudes a silicon die, including an array of control circuits, and a plurality of integrated emitter modules disposed on the silicon die. Each integrated emitter module includes a single epitaxial stack comprising multiple layers of III-V semiconductor compounds, which define a vertical emitter including an optically active layer and upper and lower distributed Bragg reflectors (DBRs) on opposing sides of the optically active layer, and a transistor in series with the vertical emitter and including a terminal in contact with a respective one of the control circuits, so as to actuate the vertical emitter in response to a control signal applied to the terminal by the respective one of the control circuits.

Abstract: An image sensing device includes a detector assembly, which includes a matrix of optical sensing elements having a predefined pitch. Each optical sensing element includes an active area having a width that is less than 90% of the pitch. An array of optical apertures are respectively aligned with the optical sensing elements such that each optical aperture is positioned at a distance from a respective optical sensing element that is no less than twice the width of the active area. Objective optics are configured to focus light from a scene onto the detector assembly.

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

Abstract: An optical device includes a radiation source, which is configured to emit a beam of light, and a scanning cell positioned to receive the beam of light. The scanning cell includes transparent entrance and exit faces, at least one of the faces including a flexible membrane. A transparent fluid is contained between the entrance and exit faces, so that the beam enters the transparent fluid through the entrance face and exits the transparent fluid through the exit face. At least one actuator is coupled to the flexible membrane, and configured, responsively to an applied electrical signal, to apply an asymmetrical deformation to the flexible membrane, thereby deflecting the beam by refraction in the transparent fluid.

Abstract: Optical sensing apparatus (20) includes an array (28) of emitters (50), which emit pulses of optical radiation at different, respective times in response to a control input applied to the array. A receiver (26) includes a plurality of detectors (40), which output signals indicative of times of arrival of photons at the detectors. Optics (30, 32) project the optical radiation from the emitters onto respective locations in a scene and image the respective locations onto corresponding pixels of the receiver. A controller (44) controls the emitters to emit the output pulses in a predefined spatio-temporal sequence, and collects and processes the signals output by corresponding pixels in synchronization with the spatio-temporal sequence so as to measure respective times of flight of the pulses to and from the respective locations in the scene.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optoelectronic device includes a first semiconductor die, having first front and rear surfaces and including at least one avalanche photodetector configured to output electrical pulses in response to photons incident on the first front surface. A second semiconductor die has a second front surface, which is bonded to the first rear surface, and a second rear surface, and includes a photodetector receiver analog circuit coupled to the at least one avalanche photodetector and an emitter driver circuit configured to drive a pulsed optical emitter. A third semiconductor die has a third front surface, which is bonded to the second rear surface, and a third rear surface, and includes logic circuits coupled to control the photodetector receiver analog circuit and the emitter driver circuit and to receive and process the electrical pulses output by the at least one avalanche photodetector.

Abstract: An optical device includes a radiation source, which is configured to emit a beam of light, and a scanning cell positioned to receive the beam of light. The scanning cell includes transparent entrance and exit faces, at least one of the faces including a flexible membrane. A transparent fluid is contained between the entrance and exit faces, so that the beam enters the transparent fluid through the entrance face and exits the transparent fluid through the exit face. At least one actuator is coupled to the flexible membrane, and configured, responsively to an applied electrical signal, to apply an asymmetrical deformation to the flexible membrane, thereby deflecting the beam by refraction in the transparent fluid.

Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

Abstract: An electro-optical device includes a radiation source, which is configured to emit multiple beams of light. A scanner includes an array of cells. Each cell is positioned to receive one or more of the beams of light and includes transparent entrance and exit faces, at least one of the faces comprising a flexible membrane. A volume of a transparent fluid is contained between the entrance and exit faces, so that the one or more of the beams enter the volume through the entrance face and exit the volume through the exit face. At least one actuator is coupled to the flexible membrane, and configured, responsively to an applied electrical signal, to apply an asymmetrical deformation to the flexible membrane, thereby deflecting the beams by refraction in the transparent fluid. A controller is configured to vary the electrical signal so as to scan the beams of light over respective angular ranges.

Abstract: A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller sets, in each of at least some of the acquisition periods, different, respective gating intervals for different ones of the sensing elements.

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.