Abstract: Embodiments create groupings of singulated strips of mixed (chamfered; rectangular) footprint/outline/perimeter types. The groupings exhibit a consistent ratio of chamfered strips to rectangular strips. These groupings can then be freely incorporated into solar modules in order to offer a pleasingly uniform appearance.

Abstract: Embodiments relate to a solar module comprising a plurality of photovoltaic (PV) elements (strips) arranged in series in an overlapping shingled configuration to provide a string. Conducting wires exhibiting low series resistance are disposed along the direction of serial connection of the strips. The wires overlap and are in contact with conducting fingers exhibiting higher series resistance, that extend in other than the direction of serial connection. The fingers receive current from underlying areas of the shingled strip. The current is collected by the wire and transmitted along the line of serial electrical communication. Because the photovoltaic (PV) current is carried primarily by the wires (rather than the fingers), series resistance can be reduced and Fill Factor (FF) may be improved. This in turn leads to lower Cell-To-Module (CTM) loss and higher module power.

Abstract: Embodiments relate to singulated strips of photovoltaic material having physical features that inhibit the spreading of Electrically Conductive Adhesive (ECA), during the connection of such strips to form a solar module.

Abstract: Separation of individual strips from a solar cell workpiece, is accomplished by excluding a junction (e.g., a homojunction such as a p-n junction, or a heterojunction such as a p-i-n junction) from regions at which separation is expected to occur. According to some embodiments, the junction is excluded by physical removal of material from inter-strip regions of the workpiece. According to other embodiments, exclusion of the junction is achieved by changing an effective doping level (e.g., counter-doping, deactivation) at inter-strip regions. For still other embodiments, the junction is never formed at inter-strip regions in the first place (e.g., using masking during original dopant introduction). By imposing distance between the junction and defects arising from separation processes (e.g., backside crack propagation), losses attributable to electron-hole recombination at such defects are reduced, and collection efficiency of shingled modules is enhanced.

Abstract: Photovoltaic devices and methods for fabricating a photovoltaic devices. The method includes applying a coating layer that surrounds each of a plurality of silicon particles. The method also includes implanting the plurality of silicon particles into a substrate layer such that an exposed portion of each of the plurality of silicon particles extends away from a surface of the substrate layer. The method further includes removing a portion of the coating layer that is positioned around the exposed portion of each of the plurality of silicon particles. The method also includes placing an insulator layer on the surface of the substrate layer. The method further includes placing a selective carrier transport layer on the exposed portion of each of the plurality of silicon particles.

Abstract: A semiconductor module comprises a string made up of a plurality of cells or strips arranged in series. A front surface of at least one cell or strip, has a polarity opposite to that of the front surface of another cell or strip in the string. In some embodiments the strips may comprise photovoltaic devices of different structures, for example Heterojunction (HJT) and Tunnel Oxide Passivated Contact (TOPCon). According to certain embodiments, one or more cells or strips of the string may be arranged in an overlapping shingled configuration, such that a front surface of the overlapped strip exhibits the appropriate polarity. For particular embodiments, one or more cells or strips may be adjacent in the string, such that a cell or strip has a front or back surface of polarity appropriate to connect with the adjacent cell or strip (e.g., using a ribbon located on a same surface).

Abstract: An optical parametric oscillator includes one unidirectional enhancement resonator for optical pump-radiation and a second unidirectional resonator at least partially coaxial with the enhancement resonator. An optically nonlinear crystal is located in the coaxial portion of the resonators and converts the optical pump-radiation to signal radiation having a wavelength longer than that of the pump radiation and idler radiation having a wavelength longer than that of the signal radiation. The second resonator resonates the signal-wavelength radiation and delivers a fraction of that radiation as output radiation.

Abstract: An optical parametric oscillator includes one unidirectional enhancement resonator for optical pump-radiation and a second unidirectional resonator at least partially coaxial with the enhancement resonator. An optically nonlinear crystal is located in the coaxial portion of the resonators and converts the optical pump-radiation to signal radiation having a wavelength longer than that of the pump radiation and idler radiation having a wavelength longer than that of the signal radiation. The second resonator resonates the signal-wavelength radiation and delivers a fraction of that radiation as output radiation.

Abstract: A hybrid CW MOPA includes an OPS-laser resonator delivering radiation in a plurality of longitudinal lasing-modes or wavelengths. The multiple longitudinal mode output is amplified in a fiber-amplifier. Amplified lasing-modes from the fiber-amplifier are frequency-converted by an optically nonlinear crystal in a ring-resonator having the same length as the laser resonator, such that the ring-resonator is resonant for all of the amplified lasing-modes.

Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

Abstract: A method for detecting trace evidence materials on a surface comprises irradiating the surface with radiation from two or more lasers emitting radiation at different wavelengths selected to stimulate luminescence in the trace materials. The evidence is detected by observing the surface through an optical filter arranged to transmit the luminescence, while blocking transmission of the laser radiation wavelengths reflected or scattered from the surface.

Abstract: A method for detecting trace evidence materials on a surface comprises irradiating the surface with radiation from two or more lasers emitting radiation at different wavelengths selected to stimulate luminescence in the trace materials. The evidence is detected by observing the surface through an optical filter arranged to transmit the luminescence, while blocking transmission of the laser radiation wavelengths reflected or scattered from the surface.

Abstract: An apparatus and method for fabricating a microprocessor comprising a first chip (12) having an active face (30) including a central processing unit and a second chip (14) having an active face (32) electrically connected to the active face of the first chip (12), wherein the second chip (14) provides added functionality to the central processing unit of the first chip (12) and wherein the electrical connections (16, 18) are through bonding layers (28) that are in contact with the metalization 26 on the first and second chips (12, 14), is disclosed.

Abstract: An apparatus and method for fabricating-a microprocessor comprising a first chip (12) having an active face (30) including a central processing unit and a second chip (14) having an active face (32) electrically connected to the active face of the first chip (12), wherein the second chip (14) provides added functionality to the central processing unit of the first chip (12) and wherein the electrical connections (16, 18) are through bonding layers (28) that are in contact with the metalization 26 on the first and second chips (12, 14), is disclosed.

Abstract: An apparatus and method for fabricating a microprocessor comprising a first chip (12) having an active face (30) including a central processing unit and a second chip (14) having an active face (32) electrically connected to the active face of the first chip (12), wherein the second chip (14) provides added functionality to the central processing unit of the first chip (12) and wherein the electrical connections (16, 18) are through bonding layers (28) that are in contact with the metalization 26 on the first and second chips (12, 14), is disclosed.

Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

Abstract: A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be applied to the fabrication of an adjustable resistor or a MOS transistor having an adjustable threshold.