Abstract: The disclosure relates to a microelectronic image sensor device comprising: at least one detector formed by at least one photo-detector element, at least one integration capacitor associated to the photo-detector and capable of providing at least one analogue signal capable of varying at least according to a current provided by the detector, and analogue/digital conversion means for equalising charges comprising: a comparator, injector means capable of modifying the analogue signal by one or more injections, respectively of a given quantity of charge, into the capacitor, command means for charge injector means capable of modulating the given quantity of charge injected according to the intensity of said current.

Abstract: A matrix microelectronic device comprising: a plurality of cells arranged according to a matrix, one or several conductive lines provided to carry a given potential and to which respectively one or several cells of a row of cells of the matrix are linked, a plurality of voltage regulating elements, wherein said regulating elements are connected respectively between a cell of said plurality of cells and one of said conductive lines, said given potential serving as polarisation potential of said regulating elements, wherein said regulating elements are respectively provided to apply to said given cell a regulated polarisation potential.

Abstract: A matrix microelectronic device comprising: a plurality of cells laid out according to a matrix, respectively comprising at least one current source formed by at least one current source transistor (T1), a source electrode of said transistor is connected to a source biasing conductor line, a gate electrode of the transistor is connected to a gate biasing conductor line among a plurality of conductor gate biasing lines, wherein the device further comprises means for biasing the conductor gate biasing lines comprising: at least one first connection line, means for generating current or voltage, positioned on at least one end of said first connection line, and provided to generate an evolution of potentials along said first connection line.

Abstract: The disclosure relates to a microelectronic image sensor device comprising: at least one detector formed by at least one photo-detector element, at least one integration capacitor associated to the photo-detector and capable of providing at least one analogue signal capable of varying at least according to a current provided by the detector, and analogue/digital conversion means for equalising charges comprising: a comparator, injector means capable of modifying the analogue signal by one or more injections, respectively of a given quantity of charge, into the capacitor, command means for charge injector means capable of modulating the given quantity of charge injected according to the intensity of said current.