Abstract: A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals. At least one detector element includes a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region. The radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector. A channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Abstract: A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.

Abstract: The invention specifies a radiation detector for detecting radiation (8) according to a predefined spectral sensitivity distribution (9) that exhibits a maximum at a predefined wavelength ?0, comprising a semiconductor body (1) with an active region (5) serving to generate a detector signal and intended to receive radiation, in which according to one embodiment the active region (5) includes a plurality of functional layers (4a, 4b, 4c, 4d) that have different band gaps and/or thicknesses and are implemented such that they (4a, 4b, 4c, 4d) at least partially absorb radiation in a range of wavelengths greater than ?0. According to a further embodiment, disposed after the active region is a filter layer structure (70) comprising at least one filter layer (7, 7a, 7b, 7c), said filter layer structure determining the short-wave side (101) of the detector sensitivity (10) according to the predefined spectral sensitivity distribution (9) by absorbing wavelengths smaller than ?0.

Abstract: A radiation detector comprising a plurality of detector elements (1, 2, 3) each having an active region (14, 24, 34) provided for radiation reception and for signal generation, the detector elements being monolithically integrated into a semiconductor body (5) of the radiation detector, a signal that is to be generated in a first detector element being able to be tapped off separately from a signal that is to be generated in a second detector element, and at least one of the active regions being designed for radiation reception in the visible spectral range.