Abstract: A method for single or multiply charged ion implantation into a surface of a treated object, and a device for implementing the implantation method, the method including: directing towards the surface of the treated object an ion beam produced by an ion source of the electronic cyclotron resonance type; producing at least one primary electron beam and directing the primary electron beam so that it passes through the ion beam; and producing a secondary electron beam by reflecting the primary electron beam onto a target once the primary electron beam has traversed the ion beam, the target being oriented such that the secondary electron beam falls onto the surface of the treated object.

Abstract: A method for single or multiply charged ion implantation into a surface of a treated object, and a device for implementing the implantation method, the method including: directing towards the surface of the treated object an ion beam produced by an ion source of the electronic cyclotron resonance type; producing at least one primary electron beam and directing the primary electron beam so that it passes through the ion beam; and producing a secondary electron beam by reflecting the primary electron beam onto a target once the primary electron beam has traversed the ion beam, the target being oriented such that the secondary electron beam falls onto the surface of the treated object.

Abstract: A method for the implantation of mono- or multi-charged ions on a surface of an object to be treated placed in a vacuum chamber, wherein this method includes the step that consist simultaneously of: injecting into the vacuum chamber a beam of ions produced by a source of ions and directing this beam of ions towards the surface of the object to be treated, and illuminating the surface of the object to be treated with a source of ultraviolet radiation producing ultraviolet radiation that propagates in the vacuum chamber. An ion implantation installation for implementing the implantation method.