Patents by Inventor Arne Kraemer

Arne Kraemer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive sensor device and method of fabricating such magnetoresistive sensor device
    Patent number: 9304175
    Abstract: In order to further develop a magnetoresistive sensor device (100; 100?; 100?) comprising at least one substrate or wafer (10), in particular at least one silicon wafer, and at least one sensing element (30), in particular at least one A[nisotropic]M[agneto]R[esistive] sensing element and/or—at least one G[iant]M[agneto]R[esistive] sensing element, for example at least one multilayer G[iant]M[agneto]R[esistive] sensing element, said sensing element (30) being arranged on and/or under the substrate or wafer (10), as well as a corresponding method of fabricating such magnetoresistive sensor device (100; 100?; 100?) in such way that an external or extra bias magnetic field to preset the sensing element (10) and/or the magnetoresistive sensor device (100; 100?; 100?) can be dispensed with, it is proposed to arrange at least one magnetic layer (20t, 20b) on (20t) and/or under (20b) the substrate or wafer (10) and at least partially on (20t) and/or under (20b) the sensing element (30), said magnetic layer (20t, 20b
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: April 5, 2016
    Assignee: NXP B.V.
    Inventors: Arne Kraemer, Reinhard Buchhold
  • MAGNETORESISTIVE SENSOR DEVICE AND METHOD OF FABRICATING SUCH MAGNETORESISTIVE SENSOR DEVICE
    Publication number: 20090058413
    Abstract: In order to further develop a magnetoresistive sensor device (100; 100?; 100?) comprising at least one substrate or wafer (10), in particular at least one silicon wafer, and at least one sensing element (30), in particular at least one A[nisotropic]M[agneto]R[esistive] sensing element and/or—at least one G[iant]M[agneto]R[esistive] sensing element, for example at least one multi-layer G[iant]M[agneto]R[esistive] sensing element, said sensing element (30) being arranged on and/or under the substrate or wafer (10), as well as a corresponding method of fabricating such magnetoresistive sensor device (100; 100?; 100?) in such way that an external or extra bias magnetic field to preset the sensing element (10) and/or the magnetoresistive sensor device (100; 100?; 100?) can be dispensed with, it is proposed to arrange at least one magnetic layer (20t, 20b) on (20t) and/or under (20b) the substrate or wafer (10) and at least partially on (20t) and/or under (20b) the sensing element (30), said magnetic layer (20t, 20
    Type: Application
    Filed: February 13, 2007
    Publication date: March 5, 2009
    Applicant: NXP B.V.
    Inventors: Arne Kraemer, Reinhard Buchhold