Abstract: A MEMS microphone includes a substrate, a lower membrane supported on the substrate, an upper membrane suspended above the lower membrane, a first electrode supported on the lower membrane, and a second electrode supported on the upper membrane. The lower membrane and the upper membrane enclose a cavity in which the first electrode and the second electrode are located. The lower membrane and the upper membrane are each formed of silicon carbonitride (SiCN). The first electrode and the second electrode are each formed of polysilicon.

Abstract: A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

Abstract: A method for producing thin MEMS wafers including: (A) providing an SOI wafer having an upper silicon layer, a first SiO2 layer and a lower silicon layer, the first SiO2 layer being situated between the upper silicon layer and the lower silicon layer, (B) producing a second SiO2 layer on the upper silicon layer, (C) producing a MEMS structure on the second SiO2 layer, (D) introducing clearances into the lower silicon layer down to the first SiO2 layer, (E) etching the first SiO2 layer and thus removing the lower silicon layer.

Abstract: A MEMS microphone includes a substrate, a lower membrane supported on the substrate, an upper membrane suspended above the lower membrane, a first electrode supported on the lower membrane, and a second electrode supported on the upper membrane. The lower membrane and the upper membrane enclose a cavity in which the first electrode and the second electrode are located. The lower membrane and the upper membrane are each formed of silicon carbonitride (SiCN). The first electrode and the second electrode are each formed of polysilicon.

Abstract: Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced.

Abstract: Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced.

Abstract: A method for producing a semiconductor component (166) is proposed.

Abstract: A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip.

Abstract: A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm.

Abstract: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Abstract: In a method for manufacturing a micromechanical component, a cavity is produced in the substrate from an opening at the rear of a monocrystalline semiconductor substrate. The etching process used for this purpose and the monocrystalline semiconductor substrate used are controlled in such a way that a largely rectangular cavity is formed.

Abstract: A micromechanical component comprising a displaceable mass made of a substrate material having at least one actuator plate electrode and one first insulating layer between the displaceable mass and the at least one actuator plate electrode, a mounting having a frame, which at least partially encloses the displaceable mass, at least one contact terminal of the at least one actuator plate electrode, and at least one stator plate electrode, and at least one spring component, via which the displaceable mass is connected to the mounting, one of the actuator plate electrodes being connected to the assigned contact terminal in each case via the assigned spring component, wherein the frame of the mounting is made of the substrate material of the displaceable mass and wherein one of the actuator plate electrodes is configured in one piece with the assigned contact terminal and the assigned spring component in each case.

Abstract: A method for producing a semiconductor component (166) is proposed.

Abstract: A micromechanical method for manufacturing a cavity in a substrate, and a micromechanical component manufactured with this method. In this method, in a first step a first layer is produced on or in a substrate. At least one second layer is then applied onto the first layer. An access hole is produced in this second layer. Material of the first layer and of the substrate can be dissolved out through this hole, so that a cavity is produced in the substrate beneath at least a portion of the second layer. This second layer above the cavity can subsequently be used as a membrane. In addition, the possibility also exists of depositing further layers onto the second layer, only the totality of which layers constitutes the membrane. The material of the first layer is selected so that dissolving out the material of the first layer produces a transition edge in the first layer, which edge at is at a predefinable angle between the substrate and the second layer.

Abstract: A method for manufacturing a micromechanical component and the micromechanical component produced thereby. This component is preferably a diaphragm or a diaphragm layer which is independently produced for the purpose of subsequent assembly with other components.

Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

Abstract: A simple and cost-effective form of implementing a semiconductor component having a micromechanical microphone structure, including an acoustically active diaphragm as a deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counterelement as a counter electrode of the microphone capacitor, and means for applying a charging voltage between the deflectable electrode and the counter electrode of the microphone capacitor. In order to not impair the functionality of this semiconductor component, even during overload situations in which contact occurs between the diaphragm and the counter electrode, the deflectable electrode and the counter electrode of the microphone capacitor are counter-doped, at least in places, so that they form a diode in the event of contact. In addition, the polarity of the charging voltage between the deflectable electrode and the counter electrode is such that the diode is switched in the blocking direction.

Abstract: A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip.

Abstract: A method for producing an electrical circuit having at least one semiconductor chip is disclosed. The method includes forming a wiring layer at a contact side of the at least one semiconductor chip, which is encapsulated with a potting compound apart from the contact side. The wiring layer has at least one conductor loop for the purpose of forming an electrical coil.