Patents by Inventor Arno Stockman

Arno Stockman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10797168
    Abstract: An electronic device can include a HEMT that includes a channel layer, a barrier layer, and a gate electrode. The barrier layer can be disposed between the channel layer and the gate electrode and include a first portion, a second portion, and a third portion. The second portion can be spaced apart from the channel layer by the first portion, and the second portion is spaced apart from the gate electrode by the third portion. The second portion of the barrier layer can be configured to trap more charge, more readily recombine electrons and holes, or both as compared to each of the first and third portions of the barrier layer. The HEMT can have a VTH of at least 2 V and a subthreshold slope of at most 50 mV/decade of IDS.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: October 6, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Peter Moens, Arno Stockman, Samir Mouhoubi, Abhishek Banerjee
  • Publication number: 20200219871
    Abstract: An electronic device can include a high electron mobility transistor that includes a buried region, a channel layer overlying the buried region, a gate electrode, and a drain electrode overlying the buried region. The buried region can extend toward and does not underlie the gate electrode. In a particular aspect, the electronic device can further include a p-type semiconductor member overlying the channel layer. The gate electrode can overlie the channel layer, a p-type semiconductor member overlying the channel layer. The drain electrode can overlie and contact the buried region and the p-type semiconductor member. The p-type semiconductor member can be disposed between the gate and drain electrodes. In another embodiment, a source-side buried region may be used in addition to or in place of the buried region that is coupled to the drain electrode.
    Type: Application
    Filed: January 7, 2019
    Publication date: July 9, 2020
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Peter MOENS, Arno Stockman, Piet VANMEERBEEK, Abhishek BANERJEE, Frederick Johan G. DECLERCQ