Patents by Inventor Arnold Burger
Arnold Burger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140361221Abstract: In one embodiment, a crystal includes at least one metal halide; and an activator dopant comprising ytterbium. In another general embodiment, a scintillator optic includes: at least one metal halide doped with a plurality of activators, the plurality of activators comprising: a first activator comprising europium, and a second activator comprising ytterbium. In yet another general embodiment, a method for manufacturing a crystal suitable for use in a scintillator includes mixing one or more salts with a source of at least one dopant activator comprising ytterbium; heating the mixture above a melting point of the salt(s); and cooling the heated mixture to a temperature below the melting point of the salts. Additional materials, systems, and methods are presented.Type: ApplicationFiled: March 20, 2014Publication date: December 11, 2014Applicants: FISK UNIVERSITY, Lawrence Livermore National Security, LLCInventors: Stephen A. Payne, Nerine Cherepy, Christian Pedrini, Arnold Burger
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Patent number: 8884228Abstract: An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.Type: GrantFiled: January 27, 2012Date of Patent: November 11, 2014Assignees: Savannah River Nuclear Solutions, LLC, Fisk UniversityInventors: Aaron L. Washington, II, Martine C. Duff, Lucile C. Teague, Arnold Burger, Michael Groza
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Publication number: 20140209805Abstract: A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.Type: ApplicationFiled: March 31, 2014Publication date: July 31, 2014Applicants: FISK UNIVERSITY, BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C.Inventors: Ashley C. Stowe, Arnold Burger, Michael Groza
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Patent number: 8580149Abstract: In one embodiment, a material comprises a crystal comprising strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector according to another embodiment includes a scintillator optic comprising europium-doped strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector in yet another embodiment includes a scintillator optic comprising SrI2 and BaI2, wherein a ratio of SrI2 to BaI2 is in a range of between 0:1 A method for manufacturing a crystal suitable for use in a scintillator includes mixing strontium iodide-containing crystals with a source of Eu2+, heating the mixture above a melting point of the strontium iodide-containing crystals, and cooling the heated mixture near the seed crystal for growing a crystal. Additional materials, systems, and methods are presented.Type: GrantFiled: October 21, 2008Date of Patent: November 12, 2013Assignees: Lawrence Livermore National Security, LLC, Fisk UniversityInventors: Stephen A. Payne, Nerine J. Cherepy, Giulia E. Hull, Alexander D. Drobshoff, Arnold Burger
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Publication number: 20130193336Abstract: An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.Type: ApplicationFiled: January 27, 2012Publication date: August 1, 2013Applicants: Fisk University, Savannah River Nuclear Solutions, LLCInventors: Aaron L. Washington, II, Martine C. Duff, Lucile C. Teague, Arnold Burger, Michael Groza
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Patent number: 7687780Abstract: A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.Type: GrantFiled: October 11, 2005Date of Patent: March 30, 2010Assignees: Babcock & Wilcox Technical Services Y-12, LLC, Fisk UniversityInventors: Zane W. Bell, Arnold Burger
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Publication number: 20100044576Abstract: In one embodiment, a material comprises a crystal comprising strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector according to another embodiment includes a scintillator optic comprising europium-doped strontium iodide providing at least 50,000 photons per MeV. A scintillator radiation detector in yet another embodiment includes a scintillator optic comprising SrI2 and BaI2, wherein a ratio of SrI2 to BaI2 is in a range of between 0:1 A method for manufacturing a crystal suitable for use in a scintillator includes mixing strontium iodide-containing crystals with a source of Eu2+, heating the mixture above a melting point of the strontium iodide-containing crystals, and cooling the heated mixture near the seed crystal for growing a crystal. Additional materials, systems, and methods are presented.Type: ApplicationFiled: October 21, 2008Publication date: February 25, 2010Inventors: Stephen A. Payne, Nerine J. Cherepy, Giulia E. Hull, Alexander D. Drobshoff, Arnold Burger
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Patent number: 7550735Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.Type: GrantFiled: June 29, 2007Date of Patent: June 23, 2009Assignee: Lawrence Livermore National Security, LLCInventors: Stephen A. Payne, Arnold Burger, Krishna C. Mandal
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Publication number: 20090001277Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.Type: ApplicationFiled: June 29, 2007Publication date: January 1, 2009Inventors: Stephen A. Payne, Arnold Burger, Krishna C. Mandal
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Publication number: 20070080301Abstract: A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI2 or II-IV-V2 where the “I” component is from column 1A or 1B of the periodic table, the “II” component is from column 2B, the “III” component is from column 3A, the “IV” component is from column 4A, the “V” component is from column 5A, and the “VI” component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.Type: ApplicationFiled: October 11, 2005Publication date: April 12, 2007Inventors: Zane Bell, Arnold Burger
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Patent number: 7001849Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.Type: GrantFiled: December 19, 2002Date of Patent: February 21, 2006Assignee: Sandia National LaboratoriesInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Patent number: 6649915Abstract: A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water after attaching electrical contacts to the crystal surface.Type: GrantFiled: December 19, 2002Date of Patent: November 18, 2003Assignee: Sandia National LaboratoriesInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Publication number: 20030148551Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.Type: ApplicationFiled: December 19, 2002Publication date: August 7, 2003Applicant: Sandia CorporationInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Publication number: 20030121885Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/0 NH4F and 10 w/o H2O2 in water.Type: ApplicationFiled: December 19, 2002Publication date: July 3, 2003Inventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Patent number: 6524966Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.Type: GrantFiled: March 28, 2000Date of Patent: February 25, 2003Assignee: Sandia National LaboratoriesInventors: Gomez W. Wright, Ralph B. James, Arnold Burger, Douglas A. Chinn
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Patent number: 5933706Abstract: A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.Type: GrantFiled: May 28, 1997Date of Patent: August 3, 1999Inventors: Ralph James, Arnold Burger, Kuo-Tong Chen, Henry Chang
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Patent number: 5365876Abstract: An optically transparent furnace (10) having a detection apparatus (29) with a pedestal (12) enclosed in an evacuated ampule (16) for growing a crystal (14) thereon. Temperature differential is provided by a source heater (20), a base heater (24) and a cold finger (26) such that material migrates from a polycrystalline source material (18) to grow the crystal (14). A quartz halogen lamp (32) projects a collimated beam (30) onto the crystal (14) and a reflected beam (34) is analyzed by a double monochromator and photomultiplier detection spectrometer (40) and the detected peak position (48) in the reflected energy spectrum (44) of the reflected beam (34) is interpreted to determine surface temperature of the crystal (14).Type: GrantFiled: February 1, 1993Date of Patent: November 22, 1994Assignee: The United States of America as represented by the United States Department of EnergyInventors: Donald O. Nason, Arnold Burger