Abstract: A process for simultaneously selectively depositing a high purity nickel containing alloy (i.e. a nickel-boron alloy having a nickel content in excess of 99.5 percent) over a preformed metallurgy pattern (including the individual, electrically isolated contact pads and the seal band area thereon) on the top-side dielectric surface of a multi-layer ceramic module. The metallurgy pattern on such top-side surface of such module is appropriately catalyzed and then immersed in a bath which is essentially lead-free and which includes a source of nickel ions, a borane reducing agent, and an effective amount of an organic divalent sulfur compound, preferably thiodiglycollic acid.

Abstract: A process for simultaneously selectively depositing a high purity nickel containing alloy (i.e. a nickel-boron alloy having a nickel content in excess of 99.5 percent) over a preformed metallurgy pattern (including the individual, electrically isolated contact pads and the seal band area thereon) on the top-side dielectric surface of a multi-layer ceramic module. The metallurgy pattern on such top-side surface of such module is appropriately catalyzed and then immersed in a bath which is essentially lead-free and which includes a source of nickel ions, a borane reducing agent, and an effective amount of an organic divalent sulfur compound, preferably thiodiglycollic acid.

Abstract: A process for forming a high density solder pad and fan-out metallurgy system in a ceramic substrate wherein a pattern of indented lines is formed in the surface of a green ceramic substrate, the lines filled with a conductive metal paste, a layer of dielectric green ceramic material deposited over at least a portion of the area of the pattern of indented lines, and sintering the resultant substrate.

Abstract: A process for forming a top surface metallurgy pattern on a green unsintered ceramic substrate including the steps of forming indented lines on the surface of the substrate, sintering the substrate, depositing a blanket layer over the top surface of the substrate with a thickness less than the depth of the indented lines, applying a masking layer over the metal layer, removing the masking layer over all portions except the indented lines, removing the exposed areas of the metal layer, and removing the remaining portions of the masking layer.

Abstract: A process for forming a pattern of conductive lines on the top of a multi-layer ceramic substrate comprising:providing a green ceramic substrate, embossing a pattern of grooves in the top surface of the green ceramic substrate,sintering the green ceramic substrate to thereby form a multi-layer ceramic substrate anddepositing a conductive material in at least a portion of said embossed pattern of grooves.

Abstract: A process for forming a high density solder pad and fan-out metallurgy system in a ceramic substrate wherein a pattern of indented lines is formed in the surface of a green ceramic substrate, the lines filled with a conductive metal paste, a layer of dielectric green ceramic material deposited over at least a portion of the area of the pattern of indented lines, and sintering the resultant substrate.

Abstract: A method of making a multi-layer ceramic substrate for an integrated circuit device package having internal circuitry by forming a plurality of porous ceramic bisque sheets, impregnating the pores of the bisque sheets with an organic binder material, forming openings through the impregnated bisque sheets, filling the openings with conductive material and imprinting conductive circuitry patterns on the surface of the impregnated bisque sheets of a conductive material, assembling the plurality of apertured printed impregnated bisque sheets into a laminated unit, and sintering the laminated unit to form a unitary laminated structure having an interconnected internal circuitry system.

Abstract: A solution for dissolving noble metal alloys which include tin, and other metals commonly used in semiconductor package substrates, having significant concentrations of KI, iodine and halogen ions selected from the group consisting of chloride and bromide ions.

Abstract: A liftoff process for selectively depositing additional metal layers on an existing metallurgy pattern supported on a dielectric substrate which includes the steps of (1) depositing a melt material on the dielectric substrate which material, after melting, has the characteristic of wetting the substrate surface, but not the existing metallurgy pattern, (2) heating the melt material to convert it to a liquid wherein the material is distributed to cover the dielectric substrate surface, but not the metallurgy pattern, (3) cooling the liquid material to solidify it, (4) depositing a blanket layer of metal over the solidified material and the metallurgy pattern, and (5) dissolving the solidified material in a suitable solvent thereby removing the material and the overlying metal layer portions.