Abstract: Disclosed is a crossover structure and method of fabricating such structure which contributes low capacitance to the circuit performance. The crossover utilizes a dielectric material which includes spheres of an insulating material in order to separate the conductors. In one aspect of the invention, a UV curable epoxy including hollow glass spheres is deposited on the crosspoint areas and the crossover connector deposited thereon. In another aspect of the invention, the crossover is formed with an air gap and the gap is subsequently filled with an encapsulating material including the spheres.

Abstract: Disclosed is a crossover structure and method of fabricating such crossovers in microelectronic circuits. The invention utilizes as a separator between the crossover beam and the conductor on the substrate a mixture of at least 50 percent by weight of fine grain SiO.sub.2 and an organic dielectric. For high temperature curing, this dielectric can be a silicone resin. For metallization systems which are sensitive to high temperatures, the dielectric can be a low temperature or ultra-violet curing organic material, such as an epoxy. The crossover processing is simplified by fabricating the beam crossover in direct contact with the insulating layer.