Abstract: A method for predicting the proclivity of various materials to emit electrons, and thus their suitability for cathode fabrication. The method includes steps to determine the surface work function lowering by analyzing and comparing the Auger electron-energy spectra of a plurality of sample materials.

Abstract: An electro-chemical gas sensor for use in electron tubes comprising a crylline body of BaO formed on a non-interacting (chemically and electrically) substrate and at least two electrodes. The change in conductivity of the barium oxide upon exposure to tube gases may be used to determine the type and quantity of gases contaminating the electron emitter and estimate changes in the emitter's work function or electron emission capability due to gas contamination.

Abstract: An electron-beam scanning system for investigating the nonuniformity of (1) he work function, (2) the position of the conduction-band edge with respect to the Fermi level, and (3) the electron affinity at the surface of a single-crystal semiconductor. A small-diameter, low-energy electron beam is scanned over the surface to be investigated. The current collected by the surface for electron energies in the retarding-field region is related to the work function of the surface, whereas the current collected by the surface for electron energies in the accelerating-field region is related to the position of the conduction-band edge. The electron affinity is related to the combination of these relationships. Variations in the current collected by the surface for appropriately selected electron energies are used to provide a visual display of variations in these quantities.

Abstract: A method which utilizes low-energy electron reflections to determine the ctron affinity and to simultaneously locate the position of the conduction-band edge with respect to the Fermi level at the surface of a single-crystal semiconductor. A beam of very-low-energy electrons (<10eV) is directed onto the surface of the semiconductor and the reflection pattern (beam energy v. current collected by the semiconductor) is analyzed using a kinematical approximation for the interference phenomena.