Abstract: Improved dissolution inhibition resists for use in microlithography are disclosed herein. These resists are comprised of phenolic base resin(s) having increased inhibitability and which are suitable for use in resist formulations for microlithography and semiconductor applications.

Abstract: Onium salt capable of generating acid upon exposure to actinic radiation having the following structure:(R.sub.1).sub.a (R.sub.2).sub.b (R.sub.3).sub.c Q.sup.+ --A--M.sup.+ X.sup.- --B--X'.sup.-where:Q is S;R.sub.1, R.sub.2 and R.sub.3 are independently substituted or unsubstituted aromatic, aliphatic, or aralkyl groups having 7-18 carbon atoms;M.sup.+ is a cationic organic radical;A is a divalent radical selected from the group of hindered alkylene groups, substituted or unsubstituted aromatic or aralkyl groups;B is a divalent aromatic sensitizer which absorbs radiation having a wavelength longer than 300 nm and is capable of transferring an electron to Q,x.sup.- and X'.sup.- are anionic groups; and wherein A provides a spatial separation between Q and M, and B provides a spatial separation between X and X', such that the spatial separation provided by A between Q and M is substantially the same as the spatial separation provided by B between X and X'.

Abstract: This invention relates to the preparation of solvent soluble polymeric materials which become insoluble in solvents after exposure to actinic light, x-rays or electron beams.The polymers are linear block copolymers comprising two segments; a soft segment which forms a continuous phase, and a rigid, crystallizable photoreactive segment which forms a dispersed phase. The rigid segments are chosen from polyurethanes, polyesters, polyamides, and polyureas which contain a diacetylene group in their repeat units. The soft segments are low molecular weight rubbery polymers selected from groups such as polyethers, polyesters, polydienes, and polysiloxanes.The polymers produced are useful in a wide variety of applications in the field of coatings and graphic arts. More particularly, this invention relates to negative photoresists which are remarkable by their (1) high photosensitivity (2) great latitude in tailoring of film properties, (3) high thermal stability and (4) oxygen insensitivity.