Patents by Inventor Arnoud Fortuin

Arnoud Fortuin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal etching method for an interconnect structure and metal interconnect structure obtained by such method
    Publication number: 20060148251
    Abstract: A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15?) lying above the stop layer, said metal layer being patterned according to a desired pattern.
    Type: Application
    Filed: February 3, 2004
    Publication date: July 6, 2006
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Marcel Broekaart, Arnoud Fortuin
  • Deep insulating trench
    Patent number: 7038289
    Abstract: Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determines the depth of the plug, and a first portion that tapers outwards from the neck as the distance from the bottom increases. Deep isolation trenches may be applied, in particular, to bipole and BiCMOS circuits.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: May 2, 2006
    Assignees: STMicroelectronics SA, Koninklijke Philips Electronics
    Inventors: Michel Marty, Arnoud Fortuin, Vincent Arnal
  • Deep insulating trench and method for production thereof
    Publication number: 20040147093
    Abstract: Deep isolation trenches having sides and a bottom are formed in a semiconductor substrate. The sides and the bottom are coated with an electrically insulating material that delimits an empty cavity, and forms a plug to close the cavity. The sides of the trench are configured with a neck that determines the depth of the plug, and a first portion that tapers outwards from the neck as the distance from the bottom increases. Deep isolation trenches may be applied, in particular, to bipole and BiCMOS circuits.
    Type: Application
    Filed: December 4, 2003
    Publication date: July 29, 2004
    Inventors: Michel Marty, Arnoud Fortuin, Vincent Arnal