Patents by Inventor Arnoux Rossouw

Arnoux Rossouw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state thin film hybrid electrochemical cell
    Patent number: 10734674
    Abstract: Thin film all-solid-state power sources, including pseudocapacitors having solid inorganic Li+-ion conductive electrolyte, for IoT, microsensors, MEMS, RFID TAGs, medical devices, elements of microfluidic chips Micro Electro Harvesting and ultra-light energy storage. An electrochemical power source includes a substrate; a first current collector layer on the substrate; a first buffer/cache layer on the first current collector layer; a solid-state electrolyte layer on the first buffer/cache layer; a second buffer/cache layer on the solid-state electrolyte layer; a second current collector layer on the second buffer/cache layer. Each buffer/cache layer is formed of LiXMYO3, where M is Nb, Ta, Ti, V, X is 0.8-1.4, and Y is 1.2-0.6. The buffer/cache layer is 15-1000 nm. At least one Faradaic layer is between the first collector layer and the first buffer layer and/or between the second collector layer and the second buffer layer.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: August 4, 2020
    Assignee: Thinika, LLC
    Inventors: Vladimir Igorevich Meshcheryakov, Arnoux Rossouw, Anton Mikhailovich Manakhov, Nikolay Anatolievich Pogorelov, Elana Viktorovna Kolesnikova, Vladimir Aleksandrovich Chugunov
  • SOLID-STATE THIN FILM HYBRID ELECTROCHEMICAL CELL
    Publication number: 20190051936
    Abstract: Thin film all-solid-state power sources, including pseudocapacitors having solid inorganic Li+-ion conductive electrolyte, for IoT, microsensors, MEMS, RFID TAGs, medical devices, elements of microfluidic chips Micro Electro Harvesting and ultra-light energy storage. An electrochemical power source includes a substrate; a first current collector layer on the substrate; a first buffer/cache layer on the first current collector layer; a solid-state electrolyte layer on the first buffer/cache layer; a second buffer/cache layer on the solid-state electrolyte layer; a second current collector layer on the second buffer/cache layer. Each buffer/cache layer is formed of LiXMYO3, where M is Nb, Ta, Ti, V, X is 0.8-1.4, and Y is 1.2-0.6. The buffer/cache layer is 15-1000 nm. At least one Faradaic layer is between the first collector layer and the first buffer layer and/or between the second collector layer and the second buffer layer.
    Type: Application
    Filed: August 13, 2018
    Publication date: February 14, 2019
    Inventors: Vladimir Igorevich Meshcheryakov, Arnoux Rossouw, Anton Mikhailovich Manakhov, Nikolay Anatolievich Pogorelov, Elena Viktorovna Kolesnikova, Vladimir Aleksandrovich Chugunov