Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.

Abstract: A computer-implemented method for measuring a parameter of a semiconductor. A non-limiting example of the computer-implemented method includes receiving, using a processor, a raw signal from a first tool representing a measured parameter of a semiconductor device. The method also receives, using the processor, data on the measured parameter from a second tool, and calculates, using the processor, the measured parameter based on the data received from the second tool and on a constraint based on the raw signal from the first tool.

Abstract: A method and system are presented for use in controlling a multiple patterning process of n patterning stages subsequently applied to a sample to produce a target pattern thereon. The method comprises: providing intermediate measured data indicative of an optical response of the sample after being patterned by m-th patterning stage, 1?m<n; processing said intermediate measured data, determining at least a location parameter of a predetermined feature of the pattern, and generating measured data indicative of said at least one selected parameter; utilizing said at least location parameter of the predetermined feature for optimizing a data interpretation model for interpretation of measured data indicative of an optical response from the sample being patterned by k-th subsequent patterning stage, m<k?n.

Abstract: A method and system are presented for use in controlling a multiple patterning process of n patterning stages subsequently applied to a sample to produce a target pattern thereon. The method comprises: providing intermediate measured data indicative of an optical response of the sample after being patterned by m-th patterning stage, 1?m<n; processing said intermediate measured data, determining at least a location parameter of a predetermined feature of the pattern, and generating measured data indicative of said at least one selected parameter; utilizing said at least location parameter of the predetermined feature for optimizing a data interpretation model for interpretation of measured data indicative of an optical response from the sample being patterned by k-th subsequent patterning stage, m<k?n.