Abstract: The organic MEMS according to the present invention comprises a polymeric substrate comprising a substrate surface including a first region and a second region. A polymer coating is applied to the first region to provide a coating surface that is spaced apart from the substrate surface. A terminal is disposed on the second region. A metallic trace is affixed to the coating surface such that the metallic trace forms a flexible extension over the second region. The extension has a rest position where the extension is spaced apart from the terminal, and a flexed position where the extension is disposed towards the terminal. An actuator is used to provide an electric field to deflect the extension from the rest position to the flexed position. By changing the spacing between the extension and the terminal, it is possible to change the electrical condition provided by the MEMS.

Abstract: An optical filter system includes a Fabry-Perot type optical resonator formed over a semiconductor light source or light detector. The optical resonator includes a photochromatic material that has a refractive index dependent on the intensity of incident light beams. The semiconductor light source and detector can be formed over and/or using a high quality epitaxial layer of compound semiconductor material grown over a monocrystalline substrate, such as a silicon wafer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Abstract: An optical system includes a Fabry-Perot type optical resonator for selectively interrupting optical signals traveling along an optical fiber. The optical resonator is placed between ends of two adjoining optical fibers. The resonator includes a bistable photochromatic material that has a refractive index dependent on the intensity of an incident light beam. A light-emitting component provides the incident light. The light-emitting component is formed over and/or using a high quality epitaxial layer of compound semiconductor material grown over a monocrystalline substrate. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. The formation of a compliant substrate includes first growing an accommodating buffer layer on the substrate. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

Abstract: A system for use as an optical switch is disclosed. The system includes light emitting devices formed using high quality epitaxial layers of compound semiconductor materials overlying an accommodating buffer layer on a silicon wafer. The system also includes a tunable electro-optic substrate over the compound semiconductor material, and a polarization beam splitter over the electro-optic substrate. The tunable electro-optic substrate is used to change the polarization of the light emitted from the light emitting devices. The polarization beam splitter is used to guide the light beam, depending on the polarization, in two different directions. The system, together, acts as an optical switch.

Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract: Semiconductor structures and a method for fabricating semiconductor structures optimized for use in free space optical interconnect systems are disclosed. The semiconductor structures includes a optical component die edge mounted on a carrier structure. The die is formed using high quality epitaxial layers of monocrystalline compound semiconductor materials grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the compound semiconductor monocrystalline layers. The die is edge mounted to the carrier structure such that light beams emitted or detected by devices on the die are parallel to the surface of the carrier structure.

Abstract: High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.