Abstract: A meso-electromechanical system (900, 1100) includes a substrate (215), a standoff (405, 1160) disposed on a surface of the substrate, a first electrostatic pattern (205, 1105, 1110, 1115, 1120) disposed on the surface of the substrate, and a glass beam (810). The glass beam (810) has a fixed region (820) attached to the standoff and has a second electrostatic pattern (815, 1205, 1210, 1215, 1220) on a cantilevered location of the glass beam. The second electrostatic pattern is substantially co-extensive with and parallel to the first electrostatic pattern. The second electrostatic pattern has a relaxed separation (925) from the first electrostatic pattern when the first and second electrostatic patterns are in a non-energized state. In some embodiments, a mirror is formed by the electrostatic materials that form the second electrostatic pattern. The glass beam may be patterned using sandblasting (140).

Abstract: A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.

Abstract: A flexible active signal cable (100, 200) includes a flexible printed circuit substrate (105), two electrical connectors (110), at least two metal conductors (115), at least one flexible optical waveguide (120), an optical transmitter (125), and an optical receiver (130). In some embodiments, the flexible active signal cable is less than 0.5 meters long and is capable of being wrapped and unwrapped from a 5 millimeter diameter mandrel 10,000 times with a low probability of failure at a test temperature, while supporting data rates greater than 25 megabits per second.

Abstract: One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode (415) overlaying a first substrate layer (505) of the printed circuit structure, a crystallized dielectric oxide core (405) overlaying the first electrode, a second electrode (615) overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer (220) disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm2. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Electro-optic structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include light-emitting devices and control circuitry.

Abstract: Epoxy laminates incorporate up to 20 wt. % talc particles, particularly pure Montana platy talc particles having a maximum particle size of about 40 &mgr;m providing improved drilling performance, reduced dust formation, and improved Z-direction CTE, particularly when the epoxy resin has a Tg of about 150° C. or higher. The talc is selected from those which do not significantly reduce the electrical strength of the laminate relative to those which contain no talc particles. Characteristically, the talcs will have less than 5 wt. % impurities and less than 0.01 wt. % (100 wt.ppm) water extractable anions.

Abstract: Epoxy resin compositions used in preparation of laminates for electronic applications are free of the solvents typically needed in current industrial practice. The use of certain mono-substituted dicyandiamides makes possible the elimination of such solvents since all of the components are soluble in epoxy resin to an extent which provides uniform properties in the cured laminates.