Patents by Inventor Arpan Chakraborty

Arpan Chakraborty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230420619
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Application
    Filed: March 20, 2023
    Publication date: December 28, 2023
    Inventors: Aurelien J.F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Publication number: 20230299601
    Abstract: A method of determining the capability of a nonlinear aircraft power source includes accessing status values representing a current state of an energy storage system in an aircraft, accessing demand values related to expected power demands on the energy storage system, modeling an ongoing status of the energy storage system using the status values and the demand values to predict when one of the status values will reach a threshold value, and providing an output of a capability of the aircraft based on the status value reaching the threshold value.
    Type: Application
    Filed: March 16, 2022
    Publication date: September 21, 2023
    Inventors: Aria Tedjarati, Christos Bais, Arpan Chakraborty, Ruxiu Zhao, Paul Snow, Peter Wilson, Blake English
  • Patent number: 11611023
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: March 21, 2023
    Assignee: KORRUS, INC.
    Inventors: Aurelien J. F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Publication number: 20220172606
    Abstract: An example method for extracting traffic scenarios from vehicle sensor data is disclosed. The example method includes acquiring vehicle data generated by one or more sensors coupled to a vehicle. The vehicle data is at least partially indicative of the surroundings of the vehicle during a particular time frame. The vehicle data is analyzed to identify objects in the surroundings of the vehicle and to determine the motion of the vehicle relative to the surroundings during the particular time frame. A plurality of events are defined, each indicative of a relationship between the vehicle and the objects. A scenario is defined as a particular combination of the events. Portions of the vehicle data in which the combination of elements occurs during a time interval are identified, and at least some of the identified data is extracted to a predefined data structure to create an extracted scenario.
    Type: Application
    Filed: December 1, 2021
    Publication date: June 2, 2022
    Inventors: Samyak Pandya, Jit Ray Chowdhury, Srinivas Aellala Reddy, Nalin Gupta, Arpan Chakraborty, Gaurav Singh
  • Publication number: 20220174795
    Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
    Type: Application
    Filed: February 17, 2022
    Publication date: June 2, 2022
    Inventors: MICHAEL R. KRAMES, TROY TROTTIER, FRANK M. STERANKA, WILLIAM D. HOUCK, ARPAN CHAKRABORTY
  • Patent number: 11114594
    Abstract: A radiation emitting device comprising light scattering particles of different sizes that at least partially surround an emitter, improving the spatial color mixing and color uniformity of the device. Multiple sizes of light scattering particles are dispersed in a medium to at least partially surround a single- or multiple-chip polychromatic emitter package. The different sizes of light scattering particles interact with corresponding wavelength ranges of emitted radiation. Thus, radiation emitted over multiple wavelength ranges or sub-ranges can be efficiently scattered to eliminate (or intentionally create) spatially non-uniform color patterns in the output beam.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: September 7, 2021
    Assignee: CreeLED, Inc.
    Inventor: Arpan Chakraborty
  • Publication number: 20210057615
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Application
    Filed: June 29, 2020
    Publication date: February 25, 2021
    Inventors: Aurelien J.F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Patent number: 10714655
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: July 14, 2020
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10700244
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: June 30, 2020
    Assignee: ECOSENSE LIGHTING, INC.
    Inventors: Aurelien J. F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Patent number: 10529892
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: January 7, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20190371964
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: August 20, 2019
    Publication date: December 5, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10446712
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 15, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Publication number: 20190115495
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 18, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10193013
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: January 29, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10147850
    Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: December 4, 2018
    Assignee: Soraa, Inc.
    Inventors: Michael R. Krames, Troy Trottier, Frank M. Steranka, William D. Houck, Arpan Chakraborty
  • Publication number: 20180097145
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: November 30, 2017
    Publication date: April 5, 2018
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Publication number: 20180013035
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: September 7, 2017
    Publication date: January 11, 2018
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Patent number: 9865772
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: January 9, 2018
    Assignee: APPLE INC.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 9793435
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: October 17, 2017
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20170222100
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 3, 2017
    Inventors: Aurelien J.F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier