Patents by Inventor Arpan Chakraborty

Arpan Chakraborty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10714655
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: July 14, 2020
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10700244
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: June 30, 2020
    Assignee: ECOSENSE LIGHTING, INC.
    Inventors: Aurelien J. F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Patent number: 10529892
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: January 7, 2020
    Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20190371964
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: August 20, 2019
    Publication date: December 5, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10446712
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 15, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Publication number: 20190115495
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 18, 2019
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10193013
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: January 29, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 10147850
    Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: December 4, 2018
    Assignee: Soraa, Inc.
    Inventors: Michael R. Krames, Troy Trottier, Frank M. Steranka, William D. Houck, Arpan Chakraborty
  • Publication number: 20180097145
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: November 30, 2017
    Publication date: April 5, 2018
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Publication number: 20180013035
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: September 7, 2017
    Publication date: January 11, 2018
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Patent number: 9865772
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: January 9, 2018
    Assignee: APPLE INC.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 9793435
    Abstract: A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: October 17, 2017
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Robert M. Farrell, Jr., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Publication number: 20170222100
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 3, 2017
    Inventors: Aurelien J.F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Publication number: 20170170360
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Application
    Filed: February 27, 2017
    Publication date: June 15, 2017
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Patent number: 9660152
    Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: May 23, 2017
    Assignee: Soraa, Inc.
    Inventors: Aurelien J. F. David, Arpan Chakraborty, Michael Ragan Krames, Troy Trottier
  • Patent number: 9653650
    Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.
    Type: Grant
    Filed: January 11, 2016
    Date of Patent: May 16, 2017
    Assignee: Soraa, Inc.
    Inventors: Arpan Chakraborty, Michael Grundmann, Anurag Tyagi
  • Patent number: 9646827
    Abstract: Disclosed is a method for processing GaN based substrate material for manufacturing light-emitting diodes, lasers, and other types of devices. In various embodiments, a GaN substrate is exposed to nitrogen and hydrogen at a high temperature. This process causes the surface of the GaN substrate to anneal and become smooth. Then other processes, such as growing epitaxial layers over the surface of GaN substrate, can be performed over the smooth surface of the GaN substrate.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: May 9, 2017
    Assignee: Soraa, Inc.
    Inventors: Arpan Chakraborty, Anurag Tyagi
  • Patent number: 9601659
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: March 21, 2017
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet, Dmitry S. Sizov
  • Publication number: 20160377262
    Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.
    Type: Application
    Filed: September 9, 2016
    Publication date: December 29, 2016
    Inventors: MICHAEL R. KRAMES, TROY TROTTIER, FRANK M. STERANKA, WILLIAM D. HOUCK, ARPAN CHAKRABORTY
  • Patent number: 9484492
    Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: November 1, 2016
    Assignee: Apple Inc.
    Inventors: David P. Bour, Kelly McGroddy, Daniel Arthur Haeger, James Michael Perkins, Arpan Chakraborty, Jean-Jacques P. Drolet