Patents by Inventor Arsam Antreasyan

Arsam Antreasyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ridge waveguide semiconductor laser with thin active region
    Patent number: 5309465
    Abstract: The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes.
    Type: Grant
    Filed: November 5, 1992
    Date of Patent: May 3, 1994
    Assignee: International Business Machines Corporation
    Inventors: Arsam Antreasyan, Greg Costrini, Peter D. Hoh
  • Waveguide ridge laser device with improved mounting and ridge protection
    Patent number: 5305340
    Abstract: A protection configuration for a semiconductor ridge waveguide laser structure is disclosed wherein layers of protective metal in the form of walls, is applied on each side of the ridge element of the ridged layer of the laser structure. The laser structure is then bonded to a mounting plate in a junction side down orientation by solder or a junction side up orientation by wire bonding. The metal layer may be composed of gold.
    Type: Grant
    Filed: December 16, 1992
    Date of Patent: April 19, 1994
    Assignee: International Business Machines Corporation
    Inventors: Arsam Antreasyan, Myra N. Boenke, Greg Costrini, Kurt R. Grebe, Christoph Harder, Peter D. Hoh
  • Group III-V compound field effect transistor with diffusion barrier
    Patent number: 4873558
    Abstract: Group III-V compound MISFETs include a low-doped diffusion barrier layer disposed between a source/drain contact-facilitating layer and the channel layer.
    Type: Grant
    Filed: February 23, 1988
    Date of Patent: October 10, 1989
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Arsam Antreasyan, Paul A. Garbinski, Vincent D. Mattera, Jr., Henryk Temkin