Patents by Inventor ARSEN SUKIASYAN

ARSEN SUKIASYAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HYBRID MOCVD/MBE EPITAXIAL GROWTH OF HIGH-EFFICIENCY LATTICE-MATCHED MULTIJUNCTION SOLAR CELLS
    Publication number: 20210135035
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.
    Type: Application
    Filed: January 15, 2021
    Publication date: May 6, 2021
    Inventors: Ferran SUAREZ, Ting LIU, Arsen SUKIASYAN, Ivan HERNANDEZ, Jordan LANG, Radek ROUCKA, Sabeur SIALA, Aymeric MAROS
  • HIGH EFFICIENCY MULTIJUNCTION PHOTOVOLTAIC CELLS
    Publication number: 20210126148
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: January 5, 2021
    Publication date: April 29, 2021
    Inventors: Ferran SUAREZ, Ting LIU, Homan B. YUEN, David Taner BILIR, Arsen SUKIASYAN, Jordan LANG
  • Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
    Patent number: 10930808
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: February 23, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ting Liu, Arsen Sukiasyan, Ivan Hernandez, Jordan Lang, Radek Roucka, Sabeur Siala, Aymeric Maros
  • High efficiency multijunction photovoltaic cells
    Patent number: 10916675
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: February 9, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ting Liu, Homan B. Yuen, David Taner Bilir, Arsen Sukiasyan, Jordan Lang
  • HIGH-TEMPERATURE SEMICONDUCTOR BARRIER REGIONS
    Publication number: 20190252568
    Abstract: Semiconductor devices having a high-temperature barrier layer between a III-V material and an underlying substrate are disclosed. The high-temperature barrier layer can minimize or prevent diffusion of arsenic and phosphorous from an overlying layer into the underlying substrate. Dilute nitride-containing multijunction photovoltaic cells incorporating a high-temperature barrier layer exhibit high efficiency.
    Type: Application
    Filed: February 14, 2019
    Publication date: August 15, 2019
    Inventors: TING LIU, FERRAN SUAREZ, ARSEN SUKIASYAN, AYMERIC MAROS
  • HIGH EFFICIENCY MULTIJUNCTION PHOTOVOLTAIC CELLS
    Publication number: 20190189826
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: February 22, 2019
    Publication date: June 20, 2019
    Inventors: FERRAN SUAREZ, TING LIU, HOMAN B. YUEN, DAVID TANER BILIR, ARSEN SUKIASYAN, JORDAN LANG
  • HYBRID MOCVD/MBE EPITAXIAL GROWTH OF HIGH-EFFICIENCY LATTICE-MATCHED MULTIJUNCTION SOLAR CELLS
    Publication number: 20190013429
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.
    Type: Application
    Filed: June 26, 2018
    Publication date: January 10, 2019
    Inventors: FERRAN SUAREZ, TING LIU, ARSEN SUKIASYAN, IVAN HERNANDEZ, JORDAN LANG, RADEK ROUCKA, SABEUR SIALA, AYMERIC MAROS
  • DILUTE NITRIDE DEVICES WITH ACTIVE GROUP IV SUBSTRATE AND CONTROLLED DOPANT DIFFUSION AT THE NUCLEATION LAYER-SUBSTRATE INTERFACE
    Publication number: 20180053874
    Abstract: Semiconductor devices having an antimony-containing nucleation layer between a dilute nitride material and an underlying substrate are disclosed. Dilute nitride-containing multijunction solar cells incorporating (Al)InGaPSb/Bi nucleation layers exhibit high efficiency.
    Type: Application
    Filed: July 26, 2017
    Publication date: February 22, 2018
    Inventors: Ferran Suarez, Ting Liu, Arsen Sukiasyan
  • DILUTE NITRIDE BISMIDE SEMICONDUCTOR ALLOYS
    Publication number: 20170365732
    Abstract: High efficiency dilute nitride bismide alloys and multijunction photovoltaic cells incorporating the high efficiency dilute nitride bismide alloys are disclosed. Bismuth-containing dilute nitride subcells exhibit a high efficiency across a broad range of irradiance energies, a high short circuit current density, and a high open circuit voltage.
    Type: Application
    Filed: May 31, 2017
    Publication date: December 21, 2017
    Inventors: TING LIU, FERRAN SUAREZ, ARSEN SUKIASYAN, JORDAN LANG
  • HIGH EFFICIENCY MULTIJUNCTION PHOTOVOLTAIC CELLS
    Publication number: 20170110613
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Application
    Filed: October 19, 2015
    Publication date: April 20, 2017
    Inventors: FERRAN SUAREZ, TING LIU, HOMAN B. YUEN, DAVID TANER BILIR, ARSEN SUKIASYAN, JORDAN LANG