Patents by Inventor Art Yu
Art Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7544305Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.Type: GrantFiled: September 28, 2007Date of Patent: June 9, 2009Assignee: United Microelectronics Corp.Inventors: Chia-Jung Hsu, Art Yu, Hsiao-Ling Lu, Teng-Chun Tsai
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Publication number: 20080029478Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.Type: ApplicationFiled: September 28, 2007Publication date: February 7, 2008Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Jung Hsu, Art Yu, Hsiao-Ling Lu, Teng-Chun Tsai
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Patent number: 7294575Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.Type: GrantFiled: January 5, 2004Date of Patent: November 13, 2007Assignee: United Microelectronics Corp.Inventors: Chia-Rung Hsu, Art Yu, Hsiao-Ling Lu, Teng-Chun Tsai
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Patent number: 7172970Abstract: A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.Type: GrantFiled: March 11, 2003Date of Patent: February 6, 2007Assignee: United Microelectronics Corp.Inventors: Zong Huei Lin, Art Yu, Chia Rung Hsu, Teng-Chun Tsai
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Publication number: 20060258158Abstract: A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.Type: ApplicationFiled: July 19, 2006Publication date: November 16, 2006Inventors: Zong Lin, Art Yu, Chia Hsu, Teng-Chun Tsai
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Publication number: 20050148184Abstract: A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.Type: ApplicationFiled: January 5, 2004Publication date: July 7, 2005Inventors: Chia-Rung Hsu, Art Yu, Hsiao-Ling Lu, Teng-Chun Tsai
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Publication number: 20050101233Abstract: A polishing element comprising a polishing platen, a polishing sub-pad and a polishing pad is provided. The polishing sub-pad is set up over the polishing platen and the polishing pad is set up over the polishing sub-pad. A first surface of the polishing sub-pad interfaces with the polishing pad and a second surface of the polishing sub-pad interfaces with the platen. Either the first surface or the second surface of the polishing sub-pad is an undulating surface.Type: ApplicationFiled: November 19, 2003Publication date: May 12, 2005Inventors: Teng-Chun Tsai, Chia-Rung Hsu, Art Yu, Gene Li
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Patent number: 6797190Abstract: A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.Type: GrantFiled: March 6, 2003Date of Patent: September 28, 2004Assignee: United Microelectronics Corp.Inventors: Chia-Lin Hsu, Art Yu, Shih-Hsun Hsu, Hsueh-Chung Chen
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Publication number: 20040180546Abstract: A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.Type: ApplicationFiled: March 11, 2003Publication date: September 16, 2004Applicant: UNITED MICROELECTRONICS CORP.Inventors: Zong Huei Lin, Art Yu, Chia Rung Hsu, Teng-Chun Tsai
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Publication number: 20030234078Abstract: A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.Type: ApplicationFiled: March 6, 2003Publication date: December 25, 2003Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chia-Lin Hsu, Art Yu, Shih-Hsun Hsu, Hsueh-Chung Chen
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Patent number: 6638391Abstract: A wafer carrier assembly for a chemical mechanical polishing apparatus and a polishing method using the same are provided. The present wafer carrier assembly comprises a first plate, a second plate and a flexible membrane. The first plate has a plurality of protrusions formed on a bottom surface thereof and the second plate has a plurality of apertures passing through. Each of the protrusions is matched with one of the apertures to enable the first plate and the second plate to detachably combine together. The flexible membrane is positioned under the second plate and contacts it. A surface of the flexible membrane opposite to the surface of the flexible membrane contacting the second plate provides a wafer-receiving surface.Type: GrantFiled: June 19, 2002Date of Patent: October 28, 2003Assignee: United Microelectronics Corp.Inventors: Chia-Lin Hsu, Art Yu, Shih-Hsun Hsu, Hsueh-Chung Chen
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Publication number: 20020192941Abstract: The present invention provides a method of reducing dishing and erosion of a conductive structure in the process of chemical mechanical polishing. The method comprises providing a dielectric layer having at least a via hole thereon. A barrier layer is formed on the dielectric layer and the via hole. A conductive layer, such as copper layer, is formed on the barrier layer and filled into the via hole to form the conductive structure. The partial conductive layer is removed to expose the partial barrier layer. The exposed barrier layer and the conductive structure are polished. The polishing step is implemented by using a reagent whereby a metallic compound is formed on the conductive structure for protecting the conductive structure against dishing and erosion.Type: ApplicationFiled: June 19, 2001Publication date: December 19, 2002Inventors: Chia-Lin Hsu, Art Yu, Shao-Chung Hu, Teng-Chun Tsai