Abstract: The tunnel-effect device comprises an input electrode 3, an output electrode 4, and N control electrodes 5 separated with tunneling barriers, the latter barriers and the interbarrier space therein appear as an ordered structure of molecules and clusters establishing tunneling junctions; each control electrode 5 is located in the region of the ordered structure of molecules and clusters 2. The dimensions and properties of the molecules and clusters provide for single-electron correlated electron tunneling at a relatively high (room) temperature. The tunnel-effect device functions on the base of controlled correlated electron tunneling. Possibility of controlling the tunneling current opens the way to constructing various electronic gate circuits on the base of single-electron tunneling junctions and hence to preparing single-electron analog and digital devices, in particular, high-sensitivity sensors.