Abstract: A high dynamic range pixel is formed in a portion of a semiconductor substrate that extends vertically across an entire thickness of the substrate between first and second surfaces, and is laterally delimited by a vertical insulating structure. A first pinned photodiode and a second pinned photodiode are arranged in this portion. The first pinned photodiode extends vertically across only part of the thickness of the substrate, on the side of the first surface. The second pinned photodiode extends vertically in the substrate between the first and second surfaces and comprises a first portion arranged between the first pinned photodiode and the second surface and a second portion arranged between the first pinned photodiode and the vertical insulating structure.

Abstract: An optoelectronic device includes a pixel having a pinned photodiode and a bipolar transfer transistor. The pinned photodiode and the bipolar transfer transistor are formed inside and on top of a same semiconductor substrate made of a group III-V material. A same doped semiconductor layer forms the collector of the bipolar transfer transistor and the cathode of the photodiode.

Abstract: A wearable device includes an image sensor having a matrix of pixels. Each pixel includes at least one light emitter and at least one photosensor. A first group of pixels of the matrix includes one light emitter configured to emit wavelengths selected among near and short-wave infrared wavelengths. A second group of pixels of the matrix includes a photosensor sensitive to the wavelengths selected among near and short-wave infrared wavelengths.

Abstract: A logarithmic response pixel includes a photosensitive circuit element and at least one diode-connected bipolar junction transistor. The at least one diode-connected bipolar junction transistor has a base coupled to a first conduction node of the at least one diode-connected bipolar junction transistor. A second conduction node of the at least one diode-connected bipolar junction transistor is coupled to a node of the photosensitive circuit element.

Abstract: An optical device includes a layer having a face configured to be traversed by light at an operating wavelength. The face of the layer includes a fractal structure lacking rotational symmetry such as a fractal structure that corresponds to a fractal expressed in an L-system. The fractal structure is formed by recesses that penetrate into the layer from the face. The recesses have a depth which is less that a thickness of the layer.

Abstract: A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.

Abstract: An electronic device includes a first pixel having a single junction and a second pixel having a heterojunction formed by a semiconductor substrate layer in contact with a quantum dot layer. A first filter of a first color, configured to let through wavelengths of the first color and infrared, is arranged vertically in line with the first pixel and at least partially vertically in line with the second pixel. An optical element is interposed between the first filter and the second pixel. The first filter and the optical element operate so that the first pixel receives wavelengths of the first color and the second pixel only receives infrared wavelengths.

Abstract: An imaging device includes a stack formed by a first silicon photodiode and a second photodiode based on quantum dots. The first silicon photodiode is arranged between a side of the stack configured to receive incident light and the second photodiode. The incident light includes infrared wavelengths and visible wavelengths. A filter positioned between the first silicon photodiode and the second photodiode reflects visible wavelengths back to the first silicon photodiode and passes infrared wavelengths through to the second photodiode.

Abstract: An example apparatus, method, and computer program product for preserving privacy while capturing imagery data in a surveillance setting are provided. In some embodiments, the example apparatus includes an event-based capture mechanism and a standard illuminance capture mechanism, electrically connected to a controller. The event-based capture mechanism is configured to generate an event-based image, while the standard illuminance capture mechanism is configured to generate a standard illuminance image. The controller includes program code configured to cause the controller to receive, from the event-based capture mechanism, the event-based image, detect an object of interest in the event-based image, activate the standard illuminance capture mechanism based at least in part on a classification of the object of interest, and receive, from the standard illuminance capture mechanism, a standard illuminance image.

Abstract: An optoelectronic device includes a pixel. The pixel is formed by: a first semiconductor region; a second semiconductor region of a conductivity type different from the first conductivity type, resting on the first region; a photodiode resting on the second region, the photodiode comprising a third semiconductor region, the third region being in contact with the second region and being separated from the first region by the second region; and a first conductive and insulated element extending in the second region. A biasing circuit is configured to bias the first conductive and insulated element by a first voltage during a first operating step to allow the passing of charges from the third region to the first region.

Abstract: A semiconductor photodetector includes an active region made of a doped semiconductor material of a first conductivity type. The active region is configured to convert a light radiation into charge carriers and to store the charge carriers. At least one repulsion element is positioned within the active region and configured to repel charge carriers stored in the active region.

Abstract: A device includes an assembly of pixels with a first pixel generating an event-based data element and a second pixel generating a light intensity data element. Each first and second pixel includes a portion of a layer that forms a photodiode. A first integrated circuit chip includes a first substrate and a first interconnection network, and a second integrated circuit chip includes a second substrate and a second interconnection network. The first and second integrated circuit chips are attached to each other by the first and second interconnection networks. The layer with the photodiodes is located on a first surface of the second substrate opposite to a second surface of the second substrate having the second interconnection network located thereon.

Abstract: A pixel includes a first doped region of a first conductivity type and a second doped region of a second conductivity type. The first doped region includes first and second layers forming a heterojunction. A dopant concentration of the first layer is greater than a dopant concentration of the second layer. The first layer is made of a semiconductor material and the second layer includes quantum dots. The second doped region is in contact with the second layer, with the first layer being laterally surrounded by an insulated conductive wall that is biased to a negative voltage.

Abstract: An example apparatus, method, and computer program product for preserving privacy while capturing imagery data in a surveillance setting are provided. In some embodiments, the example apparatus includes an event-based capture mechanism and a standard illuminance capture mechanism, electrically connected to a controller. The event-based capture mechanism is configured to generate an event-based image, while the standard illuminance capture mechanism is configured to generate a standard illuminance image. The controller includes program code configured to cause the controller to receive, from the event-based capture mechanism, the event-based image, detect an object of interest in the event-based image, activate the standard illuminance capture mechanism based at least in part on a classification of the object of interest, and receive, from the standard illuminance capture mechanism, a standard illuminance image.

Abstract: A device includes a first pixel, based on quantum dots, configured to deliver event-based data for generating an event-based image, and second pixels, each second pixel based on quantum dots, configured to deliver light intensity data for generating a light intensity image.

Abstract: An avalanche photodiode includes a stack of layers. The stack of layers includes an avalanche diode (of PN or PIN type) and a layer having quantum dots located therein. The stack of layers further includes: a charge extraction layer over the layer which includes quantum dots; a transparent conducting layer over the charge extraction layer; and an insulating layer over the transparent conducting layer. The quantum dots includes ligands formed by molecules of dopants.

Abstract: An optical device includes a layer having a face configured to be traversed by light at an operating wavelength. The face of the layer includes a fractal structure lacking rotational symmetry such as a fractal structure that corresponds to a fractal expressed in an L-system. The fractal structure is formed by recesses that penetrate into the layer from the face. The recesses have a depth which is less that a thickness of the layer.

Abstract: A system for converting thermal energy into electrical power includes a temperature-sensitive element held in a frame by its two ends between a heat source and a cold source producing a thermal gradient. A piezoelectric element is positioned between the frame and at least one end of the temperature-sensitive element. The temperature-sensitive element is configured to deform cyclically between two states under the action of the thermal gradient. With each cyclic deformation, a stress is applied to the piezoelectric element via the one end.

Abstract: A device for converting thermal power into electric power includes many conversion cells arranged inside and on top of a substrate. Each conversion cell includes a curved bimetal strip and first and second diodes coupled to the bimetal strip. The diodes are arranged in a semiconductor region of the substrate.

Abstract: A system for converting thermal energy into electrical power includes a temperature-sensitive element held in a frame by its two ends between a heat source and a cold source producing a thermal gradient. A piezoelectric element is positioned between the frame and at least one end of the temperature-sensitive element. The temperature-sensitive element is configured to deform cyclically between two states under the action of the thermal gradient. With each cyclic deformation, a stress is applied to the piezoelectric element via the one end.