Abstract: A photoluminescent polymer/transition metal complex is disclosed which is capable of selectively binding to alkenes to thereby alter the photoluminescence of the complex. In one embodiment, a poly(vinyl phenyl ketone)/Ag(I) complex is disclosed which reversibly and selectively binds with ethylene. The disclosed photoluminescent polymer/transition metal complex can be used as part of a sensor to determine the presence and/or concentration of alkenes such as ethylene.

Abstract: The presence of certain chemicals on the emitting surface of the surface-derivatized photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

Abstract: A multicolor luminescent article comprises a layer of a first luminescent semiconductor having a discontinuous layer, pattern or image comprised of a second luminescent semiconductor on at least one surface thereof.

Abstract: The presence of certain chemicals on the emitting surface of the surface-derivatized photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

Abstract: The presence of certain chemicals on the emitting surface of the surface-derivatized photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

Abstract: The presence of certain chemicals on the emitting surface of the palladium coated photoluminescent semiconductor alters the characteristics of radiation emitted from said surface. This alteration is used to indicate the presence of those chemicals in the environment.

Abstract: Semiconductor electrodes whose composition varies with distance from a surface and which varying composition provides different wavelengths of electroluminescence from the different compositions may be spatially and spectrally etched. When the semiconductors are immersed in electrolytic etching solutions, imagewise exposure to electromagnetic radiation will stimulate the etching of the semiconductor when the semiconductor is voltaically connected with an electrode.

Abstract: A photoelectrochemical cell (10) is disclosed which has a semiconductor substrate (11) formed of a solid solution of three metal and non-metal elements, with two like elements varying in concentration with depth from an exposed surface (13) of the substrate (11). The band gap energies between the valence and conduction bands varies with the concentration of the two elements from the surface, with the band gap energies being in a proper range to provide emitted light in response to light or electrical stimulation. An electrolyte (14) is maintained in contact with the exposed surface and a counterelectrode (15) is immersed in the electrolyte such that a voltage applied between a counterelectrode (15) and the substrate (11) will vary the color of light emitted from the exposed surface (13) in response to incident light or by stimulation from the electrical current passing through the substrate.

Abstract: Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.