Abstract: An optical assembly may include a base having a body defining a base mating feature surface. Optical modules are arranged in side-by-side relation on the base and in optical communication with each other. Each optical module includes a housing that is commonly-shaped with other housings. Each housing has a bottom wall defining a module mating feature surface coupled with a respective area of the base mating feature surface and at least one sidewall with an optical communication opening aligned with the at least one optical communication opening of an adjacent housing. A respective optical device is within each housing.

Abstract: An optical assembly may include a base having a body defining a base mating feature surface. Optical modules are arranged in side-by-side relation on the base and in optical communication with each other. Each optical module includes a housing that is commonly-shaped with other housings. Each housing has a bottom wall defining a module mating feature surface coupled with a respective area of the base mating feature surface and at least one sidewall with an optical communication opening aligned with the at least one optical communication opening of an adjacent housing. A respective optical device is within each housing.

Abstract: An additive manufacturing device may include a laser source configured to generate a laser beam, a build material holder configured to hold an additive build material, a controllable deflector having a first scan rate, an AOD having a second scan rate faster than the first scan rate, and a controller. The controller may be configured to control the controllable deflector and the AOD to scan the laser beam relative to the build material holder to additively manufacture a workpiece in successive layers from the additive build material.

Abstract: An opto-electronic (OE) device may include an optical fiber including a core and a cladding surrounding the core. The optical fiber may have a recess therein defining a circuit component attachment area. The OE device may include an electrically conductive circuit pattern on the circuit component attachment area and an active OE circuit component on the circuit component attachment area, optically coupled to the optical fiber, and electrically coupled to the electrically conductive circuit pattern. The OE device may further include a protective body surrounding the optical fiber and the active OE circuit component, and electrical conductors integrally formed with the electrically conductive circuit pattern, extending through the protective body, and having distal ends exposed on the protective body for external connection.

Abstract: A communications system may include a first active circuit device and a waveguide coupled to the first active circuit device. The waveguide may include a plurality of passive optical devices spaced apart from one another and arranged along an optical path, and an interconnect structure interconnecting the passive optical devices and integrally formed as a unitary body with the passive optical devices. Furthermore, the interconnect structure may have an opening therethrough aligned with the optical path.

Abstract: A communications system may include a first active circuit device and a waveguide coupled to the first active circuit device. The waveguide may include a plurality of passive optical devices spaced apart from one another and arranged along an optical path, and an interconnect structure interconnecting the passive optical devices and integrally formed as a unitary body with the passive optical devices. Furthermore, the interconnect structure may have an opening therethrough aligned with the optical path.

Abstract: An optical filter device may include an optical waveguide having an input and an output, and a plurality of first optical resonators optically coupled to the optical waveguide along a length thereof between the input and the output. The optical filter device may further include at least one second optical resonator optically coupled to the plurality of first optical resonators opposite the optical waveguide.

Abstract: An optical filter device may include an optical waveguide having an input and an output, and a plurality of first optical resonators optically coupled to the optical waveguide along a length thereof between the input and the output. The optical filter device may further include at least one second optical resonator optically coupled to the plurality of first optical resonators opposite the optical waveguide.

Abstract: A compact photonic radio frequency front end receiver system including a laser chip source, radio frequency and LO inputs, an optical modulator chip coupled to the laser source and the radio frequency and LO inputs, a millimeter scale optical radio frequency multi-pole filter coupled to the optical modulator, an optical switch array chip coupled to the optical radio frequency multi-pole filter, and a detector chip coupled to the optical switch array, all with micro-optic coupling, heterodyne signal recovery, and wavelength locking.

Abstract: A plurality of microwave signals are converted into optical signals which are directed against an optically reflective surface, whereby the optical signals reflected off of the optically reflective surface are received and converted into microwave signals, which are passed through a Fourier Transformer for extracting information of interest.

Abstract: A plurality of microwave signals are converted into optical signals which are directed against an optically reflective surface, whereby the optical signals reflected off of the optically reflective surface are received and converted into microwave signals, which are passed through a Fourier Transformer for extracting information of interest.

Abstract: A power divider/combiner is formed from multimode dielectric waveguides in hich energy in a single mode is translated into a plurality of modes in the multimode waveguide, each mode is separately amplified and applied to another multimode waveguide that combines the modes in phase at the output thereof.

Abstract: A planar antenna for microwave applications includes a supporting structure that is made using standard LTCC (low temperature co-fired ceramics) multi-layer techniques and a polyimide tape containing an adhesive at one side which is adheringly attached to the supporting structure. The body of the supporting structure defines a transmission line substrate and several of the intermediate layers define a path for microwave energy to be coupled from the transmission line substrate to the antenna. The method includes adhering the tape to the supporting structure, cutting the tape to size, and baking the tape and supporting structure in an oven at about 180.degree. C. for about 4 hours to rigidify the tape. The obtained antenna is thus protected against substrate effects such as TM mode zero cut-off frequencies.

Abstract: An optically coupled FET comprised of bottom layer, a top layer in which FET is formed and an intermediate layer having a waveguide communicating with a grating in registration with the FET.

Abstract: An integrated optical intensity modulator. The modulator is an optical waveguide on a semi-insulating substrate and having a core layer for transmitting an optical signal. The modulator includes contiguous the core layer an active cladding which has a multicoupled quantum well structure. The multicoupled quantum well includes at least one pair of quantum wells separated by a barrier. The modulator further includes first and second additional claddings wherein the core layer and the active cladding are interposed between the additional claddings. A voltage source generates an electric field through the active cladding which varies the refractive index of the active cladding as a function of the strength of the electric field for modulating the optical signal.

Abstract: The present invention utilizes the internal photovoltaic effect of a GaAs SFET to mix an RF modulated optical signal with a microwave signal. As those skilled in the art will readily recognize, a GaAs MESFET generically comprises an n layer of GaAs (channel) deposited on semi-insulating GaAs (substrate). Source, gate and drain electrodes are then formed on the channel with the gate acting as a Schottky barrier. In this standard MESFET, the difference in doping between the channel and substrate produces a potential barrier. It has been found that when the device is illuminated, the potential barrier is reduced in the region between the source and the gate and drain and the gate. This reduced potential barrier allows more drain current to flow from the device. It has been found that this drain current photoresponse is highly non-linear with respect the gate voltage applied to the device and therefore, it may be used to mix RF modulated optical signals with microwave signals.