Abstract: A semiconductor means comprising a substrate base and a piezoresistive film on the substrate wherein the material of the substrate is different in chemical formulation from the film. This results in a film having a high carrier mobility in which a semiconductor device can be oriented so that the direction of current flow in the device is in the direction of greatest carrier mobility. Performance of the device can be further improved when off-axis-symmetry films are formed on certain substrates. The method of formation of these semiconductor means includes determining the high carrier mobility directions by x-ray techniques and orienting the various masks or other means used to infuse the devices with dopant materials so that the device thus formed in the film will take advantage of high carrier mobility direction and hence higher performance semiconductor devices.