Abstract: The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s).

Abstract: An example apparatus for depositing a predetermined amount of a material onto a substrate includes a container having a cavity configured to contain the material. The container and the cavity are elongated along a first axis of the container. The apparatus further includes one or more heaters that are (i) elongated along the first axis and (ii) configured to heat and evaporate the material by heating the container. The apparatus further includes a conveyor for moving the substrate in a direction substantially perpendicular to the first axis of the container and one or more openings in the container distributed along the first axis. The one or more openings provide fluid communication between a region external to the container and the cavity. A process for depositing the predetermined amount of the material onto the substrate is also disclosed herein.

Abstract: The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s).

Abstract: Methods and systems for forming a layer from a fluid mixture on a web are provided. The system includes a fluid delivery apparatus for delivering the fluid mixture onto the web. The fluid delivery apparatus includes a cascade device and a chemical dispenser device. The system also includes a fluid stirring apparatus comprising at least one fan positioned over the web and configured to generate a flow pattern that stirs the fluid mixture on the web while the layer is being formed, without the at least one fan contacting the fluid mixture. The system further includes a fluid removal apparatus having a rinsing device and a suction device. The rinsing device is configured to dispense a rinsing fluid onto the web. The suction device is configured to remove by suction the rinsing fluid and a remaining portion of the fluid mixture remaining on the web after formation of the layer.

Abstract: Methods and systems are disclosed for processing a precursor material. The method includes introducing a substrate having a precursor material deposited on a surface of the substrate into a first zone of a vacuum chamber. The precursor material comprises copper, indium, and at least one of gallium, selenium, sulfur, sodium, antimony, boron, aluminum, and silver. The method further includes, within the first zone, heating the precursor material to a target reaction temperature within a range of about 270° C. to about 490° C. The method further includes maintaining a selenium vapor in a second zone of the vacuum chamber, and after heating the precursor material to the target reaction temperature, introducing the precursor material and the substrate to the second zone of the vacuum chamber.

Abstract: Disclosed are methods and systems for forming a layer on a web with reduced levels of particulates. The layer is formed from a fluid mixture(s) or solution of chemical reagents that react to form the layer. The system includes a conveyor device provided configured to carry the web within the chamber while the first surface of the web undergoes one or more processing steps; a first fluid delivery apparatus and a second fluid delivery apparatus, and a first fluid removal apparatus. The first fluid removal apparatus is positioned within a space arranged between the first and the second delivery apparatuses.

Abstract: Disclosed are methods and systems for processing a web. The web (402) has a first surface, a second surface opposite the first surface, and includes a magnetic material. An example system includes a processing bed (202) configured to support the web while the first surface of the web undergoes one or more processing steps. The system also includes magnets (300) positioned relative to the processing bed so as to exert a magnetic force on the web that pulls the center of the web (403) toward the processing bed. The system further includes a conveyor belt (404) configured to move the web over the processing bed (202). The conveyor belt has a first contact surface and a second contact surface opposite the first contact surface. The first contact surface is configured to contact the second surface of the web, and the second contact surface is configured to contact the processing bed.

Abstract: Methods and systems for forming a layer from a fluid mixture on a web are provided. The system includes a fluid delivery apparatus for delivering the fluid mixture onto the web. The fluid delivery apparatus includes a cascade device and a chemical dispenser device. The system also includes a fluid stirring apparatus comprising at least one fan positioned over the web and configured to generate a flow pattern that stirs the fluid mixture on the web while the layer is being formed, without the at least one fan contacting the fluid mixture. The system further includes a fluid removal apparatus having a rinsing device and a suction device. The rinsing device is configured to dispense a rinsing fluid onto the web. The suction device is configured to remove by suction the rinsing fluid and a remaining portion of the fluid mixture remaining on the web after formation of the layer.

Abstract: Methods and systems are disclosed for monitoring vapor in a vacuum reactor apparatus. An system has (a) a vacuum chamber, (b) a vapor source housed in the vacuum chamber, wherein the vapor source is configured to generate a vapor, (c) a reaction vessel housed in the vacuum chamber and coupled to the vapor source, where the reaction vessel has an outlet to the vacuum chamber, and where the reaction vessel is configured to receive the vapor from the vapor source and to emit a portion of the received vapor into the vacuum chamber through the outlet, and (d) one or more sensors housed in the vacuum chamber, where the one or more sensors are configured to detect the vapor emitted through the outlet.

Abstract: A substrate processing system particularly suitable for fabricating solar cells. The system has a front end module transporting cassettes, each cassette holding a preset number of substrates therein; a loading module coupled to the front end module and having mechanism for loading substrates from the cassettes onto carriers; and a plurality of processing chambers coupled to each other in series, each having tracks for transporting the carriers directly from one chamber to the next; wherein selected chambers of the plurality of processing chambers comprise at least one combination source having a sputtering module and an evaporation module arranged linearly in the direction of travel of the carriers.

Abstract: A high temperature evaporator is made using an electrically insulating crucible and a heating element made of woven graphite fibers. The crucible is manufactured out of an electrically insulating block to the required shape, and channels are machined on the walls of the crucible. The woven graphite cord is threaded through the channels and is used as heating elements. Since the heating cords are made of woven graphite, they are very flexible and do not embrittle. They can be manufactured to various resistivity as needed, allowing for relatively inexpensive power supplies and low current power delivery. The cords are not fragile and do not break due to thermal shock or vibration.

Abstract: A high temperature evaporator is made using an electrically insulating crucible and a heating element made of woven graphite fibers. The crucible is manufactured out of an electrically insulating block to the required shape, and channels are machined on the walls of the crucible. The woven graphite cord is threaded through the channels and is used as heating elements. Since the heating cords are made of woven graphite, they are very flexible and do not embrittle. They can be manufactured to various resistivity as needed, allowing for relatively inexpensive power supplies and low current power delivery. The cords are not fragile and do not break due to thermal shock or vibration.

Abstract: A substrate processing system particularly suitable for fabricating solar cells. The system has a front end module transporting cassettes, each cassette holding a preset number of substrates therein; a loading module coupled to the front end module and having mechanism for loading substrates from the cassettes onto carriers; and a plurality of processing chambers coupled to each other in series, each having tracks for transporting the carriers directly from one chamber to the next; wherein selected chambers of the plurality of processing chambers comprise at least one combination source having a sputtering module and an evaporation module arranged linearly in the direction of travel of the carriers.

Abstract: The magnetic properties of a cobalt based, thin film, magnetic recording layer are controlled, independent of controlling the process for depositing the magnetic layer itself, by the introduction of process compatible dopant gases into an argon atmosphere during the vacuum deposition (i.e. a sputtering process or an evaporation process) of a chromium based underlayer upon which the magnetic layer is subsequently deposited. The same or a different dopant may also be introduced into the magnetic layer. The process compatible dopant gases described contain oxygen, nitrogen and/or carbon, and mixtures thereof, and include the group purified air, oxygen, nitrogen, a mixture of oxygen and nitrogen, carbon monoxide, carbon dioxide, methane and water vapor.