Abstract: A brushless DC motor includes a fixed portion and a rotor. The rotor includes a shaft and a top engaging face. The shaft is rotatably held by the fixed portion. The top engaging face is located on a top side of the rotor. The rotor further includes at least one protruded engaging portion on the top engaging face. A carrier such as a tray or the like is fixedly coupled with the at least one protruded engaging portion. A compartment is defined in the rotor by the at least one protruded engaging portion. A filling material may be filled into the compartment for adjusting rotational balance of the rotor.

Abstract: A database apply-managing system comprises at least one database, and a database access module, which transforms specific data into general format data and accesses the general format data in the database and further stores the general format data to another database. In addition, a database apply-managing method and recording medium, which records a computer-readable database apply-managing program, are provided.

Abstract: The invention is directed to a new material useful in oral care products such as dental floss or as a toothbrush bristle. The material is a silicon-modified polyamide blended with a different polyamide material. The preferred different polyamide material is the conventional material used to make bristles of toothbrushes. The different polyamide material is preferably a nylon material.

Abstract: The invention provides a quick turn around time system (QTAT) for locating an optimal arrangement of work orders within a wafer fabrication facility providing: a real time dispatching system having a software rule database; and at least one piece of fabrication equipment having an internal buffer in communication with the software rule database, wherein the real time dispatching system and the at least one piece of fabrication equipment cooperate to optimally prioritize a work order disposed within the internal buffer of the at least one piece of fabrication equipment. A load port reservation system for in-line processing and a plurality of batch editing functions for controlling batch formation is provided. Additionally provided are two alternative methods of using the QTAT to optimally prioritize work orders within the at least one piece of fabrication equipment's internal buffer.

Abstract: The present invention provides a process of etching polysilicon gates using a silicon dioxide hard mask. The process includes exposing a substrate with a polysilicon layer formed thereon to a plasma of a process gas, which includes a base gas and an additive gas. The base gas includes HBr, Cl2, O2, and the additive gas is NF3 and/or N2. By changing a volumetric flow ratio of the additive gas to the base gas, the etch rate selectivity of polysilicon to silicon dioxide may be increased, which allows for a thinner hard mask, better protection of the gate oxide layer, and better endpoint definition and control. Additionally, when the polysilicon layer includes both N-doped and P-doped regions, the additive gas includes both NF3 and N2, and by changing a volumetric flow ratio of NF3 to N2, the etching process may be tailored to provide optimal results in N/P loading and microloading.

Abstract: A method of fabricating an interconnect line comprises forming a wall, depositing an etch mask having a thickness that decreases towards a bottom of the wall, and isotropically etching the wall at the bottom to form the interconnect line having a pre-determined gap between the substrate and a bottom of the line.

Abstract: The invention provides a quick turn around time system (QTAT) for locating an optimal arrangement of work orders within a wafer fabrication facility providing: a real time dispatching system having a software rule database; and at least one piece of fabrication equipment having an internal buffer in communication with the software rule database, wherein the real time dispatching system and the at least one piece of fabrication equipment cooperate to optimally prioritize a work order disposed within the internal buffer of the at least one piece of fabrication equipment. A load port reservation system for in-line processing and a plurality of batch editing functions for controlling batch formation is provided. Additionally provided are two alternative methods of using the QTAT to optimally prioritize work orders within the at least one piece of fabrication equipment's internal buffer.

Abstract: The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Abstract: A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density, low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.

Abstract: A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.