Patents by Inventor Arthur Ching-Lang Chiang

Arthur Ching-Lang Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power diode having improved on resistance and breakdown voltage
    Patent number: 6743703
    Abstract: A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces. The P and N doped regions can be parallel stripes or a mesh with each region being surrounded by doped material of opposite conductivity type. A diode junction associated with one surface can be an anode region with a gate controlled channel region connecting the anode region to the superjunction structure. Alternatively, the diode junction can comprise a metal forming a Schottky junction with the one surface. The superjunction structure is within the cathode and spaced from the anode. The spacing can be varied during device fabrication.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: June 1, 2004
    Assignee: APD Semiconductor, Inc.
    Inventors: Vladimir Rodov, Paul Chang, Jianren Bao, Wayne Y. W. Hsueh, Arthur Ching-Lang Chiang, Geeng-Chuan Chern
  • Power diode having improved on resistance and breakdown voltage
    Publication number: 20030006473
    Abstract: A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the superjunction structure including a plurality of alternating P and N doped regions aligned generally perpendicular to the two surfaces. The P and N doped regions can be parallel stripes or a mesh with each region being surrounded by doped material of opposite conductivity type. A diode junction associated with one surface can be an anode region with a gate controlled channel region connecting the anode region to the superjunction structure. Alternatively, the diode junction can comprise a metal forming a Schottky junction with the one surface. The superjunction structure is within the cathode and spaced from the anode. The spacing can be varied during device fabrication.
    Type: Application
    Filed: September 9, 2002
    Publication date: January 9, 2003
    Applicant: APD Semiconductor, Inc.
    Inventors: Vladimir Rodov, Paul Chang, Jianren Bao, Wayne Y.W. Hsueh, Arthur Ching-Lang Chiang, Geeng-Chuan Chern