Patents by Inventor Arthur D. Ritchie

Arthur D. Ritchie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4261761
    Abstract: Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mask and the underlying silicon surface, and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.
    Type: Grant
    Filed: September 4, 1979
    Date of Patent: April 14, 1981
    Assignee: Tektronix, Inc.
    Inventors: Shuichi Sato, Tadanori Yamaguchi, Arthur D. Ritchie
  • Patent number: 4217599
    Abstract: Improved, high performance MOS transistors are provided by a method that includes providing an oxygen-impermeable mask on a selected region of a semiconductor substrate, oxidizing the unmasked portion of the surface to provide a thick oxide at least partially recessed in the substrate, which layer includes a smoothly tapered beak that extends between the margin of the mask and the underlying silicon surface, and, after removing the mask, implanting a selected impurity in the substrate beneath the selected region to form a thin impurity layer that terminates at a sloped portion of the substrate formed by the oxidation step.
    Type: Grant
    Filed: December 21, 1977
    Date of Patent: August 12, 1980
    Assignee: Tektronix, Inc.
    Inventors: Shuichi Sato, Tadanori Yamaguchi, Arthur D. Ritchie