Abstract: A continuous film transistor fabrication process utilizes a roll of polyimide substrate film on which a plurality of groups of three metal contacts is patterned. The edges of the film are turned under, including portions of the metal contacts, to facilitate the ohmic bonding of the substrate contacts to other respective contacts on a support member. Holes are formed in the film between each pattern to act as indexing means for feeding the film through a series of processing stations. As the film passes through each station, a separate step in the fabrication takes place, until the completed, tested, and sorted transistors are removed from the last station.