Patents by Inventor Arthur F. Hebard

Arthur F. Hebard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5391323
    Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for high conductivity (comparable to or higher than those attained by n-type doped polyacetylene). The fullerene materials are soluble in common solvents.
    Type: Grant
    Filed: November 22, 1993
    Date of Patent: February 21, 1995
    Assignee: AT&T Corp.
    Inventors: Robert C. Haddon, Arthur F. Hebard, Donald W. Murphy, Matthew J. Rosseinsky
  • Patent number: 5171373
    Abstract: It has been found that fullerenes exhibit photoelectronic behavior such as photoconductivity or photovoltaic properties. Such behavior allows the fabrication of a variety of devices, such as solar cells and the use of various light-induced processes, such as the generation of a current by illumination of appropriate fullerene interfaces.
    Type: Grant
    Filed: July 30, 1991
    Date of Patent: December 15, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: Arthur F. Hebard, Barry Miller, Joseph M. Rosamilia, William L. Wilson
  • Patent number: 4966885
    Abstract: A method for fabricating thin smooth films of a planar metal oxide superconductor is disclosed. Fabrication of the superconductor film comprises depositing, on a substrate, a film of the planar metal oxide superconductor having a thickness greater than desired, and thinning at least a portion of the superconductor film to the desired thickness. In a particular embodiment of the method, thinning comprises exposing the superconductor film to a low energy ion beam directed at grazing incidence to the superconductor surface. Thin superconductor films fabricated in accordance with this method typically have substantially smooth surfaces and can have relatively low RF loss. These films can be advantageously used, inter alia, in RF striplines, microwave cavities and waveguides, bolometers, SQUIDs, and other Josephson junction devices.
    Type: Grant
    Filed: August 25, 1989
    Date of Patent: October 30, 1990
    Assignee: AT&T Bell Laboratories
    Inventor: Arthur F. Hebard
  • Patent number: 4579807
    Abstract: An optical disc including a medium having both a continuous phase and a non-continuous phase yields excellent contrast and stability for optical recording purposes. Exemplary of materials that form the desired multi-phase system are those produced by sputtering metals such as indium in an oxygen environment.
    Type: Grant
    Filed: April 6, 1984
    Date of Patent: April 1, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Greg E. Blonder, Arthur F. Hebard
  • Patent number: 4373138
    Abstract: Described is a DC powered flip-flop logic or memory element (i.e., circuit) which comprises two Josephson junction gates J.sub.1 and J.sub.2 which operate individually in the latching mode. In one logic state, the gate J.sub.1 is at V.sub.1 =O while J.sub.2 is at V.sub.2 .noteq.O. In the other logic state, the roles of the two junctions are reversed. The two junctions are interconnected by a passive network such that the switching of J.sub.2, say, from V.sub.2 =O to V.sub.2 .noteq.O induces a current-voltage transient on J.sub.1 which returns it to V.sub.1 =O, and conversely.
    Type: Grant
    Filed: February 6, 1981
    Date of Patent: February 8, 1983
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Theodore A. Fulton, Arthur F. Hebard
  • Patent number: 4358783
    Abstract: This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual Josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected Josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current.
    Type: Grant
    Filed: September 30, 1980
    Date of Patent: November 9, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Arthur F. Hebard, Joanna M. Vandenberg