Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: A medical device can include a therapy circuit configured to provide a specified electrostimulation therapy to a tissue site, the specified electrostimulation therapy including a scheduled completion, the therapy circuit including a protection circuit configured to adjust specification of the electrostimulation therapy being provided so as to provide an adjusted electrostimulation therapy before the scheduled completion. The medical device can include a monitoring circuit comprising a comparator. The monitoring circuit can be configured to trigger the protection circuit to inhibit the therapy circuit when the therapy circuit output parameter exceeds the specified threshold as indicated by the comparator.

Abstract: An apparatus, such as included as a portion of cardiac rhythm management (CRM) system, can include a subcutaneously-implantable medical device. The subcutaneously-implantable medical device can include a header assembly including a stylet access port, and the apparatus can include an intravascularly-deliverable lead assembly permanently attached to the header assembly and including a lumen to receive a stylet via the stylet access port included in the header assembly.

Abstract: This document discusses, among other things, an inductive component that can include a core having two portions: (1) a first portion composed of a first material having a first magnetic saturation level; and (2) a second portion composed of a second material selected to provide inductance for the inductive component when an external magnetic field is greater than the first magnetic saturation level. In an example, the first portion can be composed of a material having a relatively low magnetic saturation level (e.g., a ferrite), and the second portion can be composed of a material having a relatively high magnetic saturation level (e.g., a high permeability iron alloy).

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: A medical device can include a therapy circuit configured to provide a specified electrostimulation therapy to a tissue site, the specified electrostimulation therapy including a scheduled completion, the therapy circuit including a protection circuit configured to adjust specification of the electrostimulation therapy being provided so as to provide an adjusted electrostimulation therapy before the scheduled completion. The medical device can include a monitoring circuit comprising a comparator. The monitoring circuit can be configured to trigger the protection circuit to inhibit the therapy circuit when the therapy circuit output parameter exceeds the specified threshold as indicated by the comparator.

Abstract: This document discusses, among other things, an inductive component that can include a core having two portions: (1) a first portion composed of a first material having a first magnetic saturation level; and (2) a second portion composed of a second material selected to provide inductance for the inductive component when an external magnetic field is greater than the first magnetic saturation level. In an example, the first portion can be composed of a material having a relatively low magnetic saturation level (e.g., a ferrite), and the second portion can be composed of a material having a relatively high magnetic saturation level (e.g., a high permeability iron alloy).

Abstract: An apparatus for applying a signal to a nerve for the treatment of a disorder includes a main electrode body of biocompatible dielectric material and having a concave upper surface and an opposite lower surface. The concave upper surface curves about an axis and has a curvature sized to receive a nerve within the concave surface with an axis of the nerve substantially parallel to an axis of the concave surface. An electrode contact of electrically conductive material is secured to the main electrode body and has an electrode contact surface exposed on the concave surface. The concave surface terminates at opposite first and second upper ends. The electrode contact has a first end near the first end of the concave surface. A secondary electrode body of biocompatible dielectric material is attached to the first upper end of the concave surface.

Abstract: Implantable medical devices and associated methods are disclosed. In one implementation, the implantable medical device comprises a conductive housing and a remote electrode that is mechanically coupled to the conductive housing by a lead body. An amplifier is electrically connected to the remote electrode and the conductive housing for providing a signal representative of a voltage difference between the remote electrode and the conductive housing. In some methods in accordance with the present invention, the implantable medical device is implanted in an implant site overlaying one half of a rib cage of a human body. The implantable medical device produces a signal representative of the voltage difference between the remote electrode and the conductive housing and the signal is transmitted to a receiver located outside the human body.

Abstract: Implantable medical devices and associated methods are disclosed. In one implementation, the implantable medical device comprises a conductive housing and a remote electrode that is mechanically coupled to the conductive housing by a lead body. An amplifier is electrically connected to the remote electrode and the conductive housing for providing a signal representative of a voltage difference between the remote electrode and the conductive housing. In some methods in accordance with the present invention, the implantable medical device is implanted in an implant site overlaying one half of a rib cage of a human body. The implantable medical device produces a signal representative of the voltage difference between the remote electrode and the conductive housing and the signal is transmitted to a receiver located outside the human body.

Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.

Abstract: An n-channel field-effect transistor is fabricated utilizing a thin-film fullerene (for example, C.sub.60) as the active element. The fullerene film is deposited onto a device substrate in an ultra-high-vacuum chamber and is thus substantially oxygen-free. Subsequently, while still in the chamber, the fullerene film is encapsulated with a material that is impervious to oxygen.