Patents by Inventor Arthur Gossard

Arthur Gossard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11693178
    Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: July 4, 2023
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: John E. Bowers, Arthur Gossard, Daehwan Jung, Justin Norman, Chen Shang, Yating Wan
  • Publication number: 20220390669
    Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 8, 2022
    Inventors: John E. BOWERS, Arthur GOSSARD, Daehwan JUNG, Justin NORMAN, Chen SHANG, Yating WAN
  • Patent number: 11435524
    Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: September 6, 2022
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: John E. Bowers, Arthur Gossard, Daehwan Jung, Justin Norman, Chen Shang, Yating Wan
  • Publication number: 20210218230
    Abstract: A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.
    Type: Application
    Filed: May 24, 2019
    Publication date: July 15, 2021
    Inventors: John E. BOWERS, Arthur GOSSARD, Daehwan JUNG, Kunal MUKHERJEE, Justin NORMAN, Jenny SELVIDGE
  • Publication number: 20210208336
    Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.
    Type: Application
    Filed: May 24, 2019
    Publication date: July 8, 2021
    Inventors: John E. BOWERS, Arthur GOSSARD, Daehwan JUNG, Justin NORMAN, Chen SHANG, Yating WAN
  • Patent number: 10761266
    Abstract: A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate (108) is disclosed. The structure of the active optical device includes an active region (120) having quantum dots (206) made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantum dot material in order to suppress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: September 1, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Alan Young Liu, Justin Norman, Arthur Gossard, John Bowers
  • Publication number: 20200185885
    Abstract: A light emitting device includes a unipolar light emitter structured from materials arranged to provide light emission via intersubband transitions of a single type of carrier in either of the conduction band or valence band integrated with a foreign surface.
    Type: Application
    Filed: May 18, 2018
    Publication date: June 11, 2020
    Inventors: Alan Young Liu, Alexander Spott, Arthur Gossard, John Bowers
  • Publication number: 20190129097
    Abstract: A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate (108) is disclosed. The structure of the active optical device includes an active region (120) having quantum dots (206) made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantom dot material in order to supress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device.
    Type: Application
    Filed: May 31, 2017
    Publication date: May 2, 2019
    Inventors: Alan Young Liu, Justin Norman, Arthur Gossard, John Bowers
  • Publication number: 20080001127
    Abstract: Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.
    Type: Application
    Filed: June 14, 2007
    Publication date: January 3, 2008
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Joshua Zide, Arthur Gossard, Ali Shakouri, John Bowers
  • Publication number: 20070227588
    Abstract: A method and device that incorporates metallic nanoparticles at the p+-n+ tunnel junction in a cascaded photovoltaic solar cell. The use of the nanoparticles enhances the tunneling current density through the tunnel junction. As such, the efficiency of the solar cell is increased. A method in accordance with the present invention comprises making a first solar cell having a first bandgap, making a tunnel junction coupled to the first solar cell, and making a second solar cell having a second bandgap, coupled to the tunnel junction opposite the first solar cell, wherein the tunnel junction comprises nanoparticles. Such a method further optionally includes the nanoparticles being a metal or a semi metal, specifically a semi-metal of erbium arsenide, the nanoparticles being deposited in an island structure within the tunnel junction, and the first solar cell being deposited on a flexible substrate.
    Type: Application
    Filed: February 15, 2007
    Publication date: October 4, 2007
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arthur Gossard, Joshua Zide, Jeramy Zimmerman