Abstract: Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods and apparatus for forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided. Various cluster tool configurations including gas-cluster ion-beam processing modules for copper capping, cleaning, etching, and film formation steps are disclosed.

Abstract: Methods of forming capping structures on one or more different material surfaces are provided. One embodiment includes disposing a semiconductor structure in a reduced pressure chamber, forming a capping GCIB within the reduced pressure chamber, and directing the capping GCIB onto at least one of the one or more different material surfaces, so as to form at least one capping structure on the one or more surfaces onto which the capping GCIB is directed.

Abstract: Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing wells disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing wells disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing wells.

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing areas disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing areas disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing areas.

Abstract: A protected faceplate structure of a field emission display device is disclosed in one embodiment. Specifically, in one embodiment, the present invention recites a faceplate of a field emission display device wherein the faceplate of the field emission display device is adapted to have phosphor containing areas disposed above one side thereof. The present embodiment is further comprised of a barrier layer which is disposed over the one side of said faceplate which is adapted to have phosphor containing areas disposed thereabove. The barrier layer of the present embodiment is adapted to prevent degradation of the faceplate. Specifically, the barrier layer of the present embodiment is adapted to prevent degradation of the faceplate due to electron bombardment by electrons directed towards the phosphor containing areas.

Abstract: A conductive focus waffle structure for focusing electrons emitted from a cathode portion of a flat panel display device. In one embodiment, the conductive focus waffle structure comprises a grid of material comprised of substantially orthogonally oriented rows and columns. The substantially orthogonally oriented rows and columns define openings therebetween having sufficient size to allow electrons emitted from a cathode portion of a flat panel display device to pass therethrough. The focus waffle grid further comprises a lower dielectric portion adapted to be coupled to the cathode portion of the flat panel display device and an upper conductive portion coupled to the lower dielectric portion, the upper conductive portion adapted to focus the electrons passing through the openings.

Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer.

Abstract: An encapsulated matrix structure and formation method for preventing contamination caused by thermally induced outgassing and electron stimulated desorption of contaminants. In one embodiment, the present invention is comprised of a matrix structure which is adapted to be coupled to a faceplate of a flat panel display. The matrix structure is located on the faceplate so as to separate adjacent sub-pixel regions. The present embodiment further includes a contaminant prevention structure which covers the matrix structure. The contaminant prevention structure of the present embodiment has a physical structure such that contaminants originating within the matrix structure are confined therein. The contaminant prevention structure can also be designed to prevent electrons from impinging on the black matrix and desorbing contaminants. In so doing, the present invention prevents deleterious thermally induced outgassing and electron stimulated desorption of contaminants by the matrix structure.

Abstract: Fabrication of an electron-emitting device entails providing an electron-emitting structure in which multiple sets of electron-emissive elements (24) overlying an emitter electrode (12) are arranged in a line extending generally in a specified direction. Each of a group of control electrodes (28) in the electron-emitting structure contain (a) a main control portion (30) penetrated by a control opening (34) that laterally circumscribes one of the sets of electron-emissive elements and (b) a gate portion (32) that extends across the control opening and has gate openings (36) through which the electron-emissive elements are exposed. Actinic material (38P) is provided over the control electrodes and processed to form a base focusing structure (38) penetrated by multiple focus openings (40) such that each focus opening is centered on a corresponding one of the control openings in the specified direction.

Abstract: A light-emitting structure contains a plate (20), light-emissive regions (34R, 36G, and 38B) overlying the plate, and a dark region (40DR/46DC, 40IR/56DC, 60DR/66DC, or 76DR/80DR/80DC) overlying the plate and laterally surrounding each light-emissive region. In one aspect, the dark region is formed with (a) multiple first strips (40DR, 40IR, 60DR, or 76DR) extending in one direction and (b) multiple second strips (46DC, 56DC, 66DC, or 80DC) extending in another direction and also extending further away from the plate than the first strips. In another aspect, the dark region contains trapezoidally profiled strips (86), each having a width profile shaped like an upright trapezoid.

Abstract: Encapsulated matrix structures for flat panel displays are disclosed. In one embodiment, a field emission display includes a focusing structure disposed between a faceplate and a backplate, and a contamination prevention structure covering the focusing structure thereby preventing thermal outgassing and electron desorption of contaminants from the focusing structure. In another embodiment, a flat panel display includes a faceplate (100), a matrix structure (102), a porous material layer (702), a non-porous material layer (704), and a conductive coating (706).

Abstract: An electron-emitting device contains an emitter electrode (12), a group of sets of electron-emitting elements (24), a group of control electrodes (28), and a focusing system (37) for focusing electrons emitted by the electron-emissive elements. The sets of electron-emissive elements are arranged generally in a line extending in a specified direction. Each control electrode has a main portion (30) and a gate portion (32). the electron-emissive elements are exposed through gate openings (36) in the gate portion. The main portion of each control electrode crosses over the emitter electrode and has a large control opening (34) which laterally circumscribes one of the sets of electron-emissive elements. The focusing system has a group of focus openings (40) located respectively above the control openings. Each control opening is largely centered on, or/and is no more than 50% as large as, the corresponding focus opening in the specified direction.

Abstract: A conductive focus waffle structure for focusing electrons emitted from a cathode portion of a flat panel display device, and a method for forming the conductive focus waffle structure. In one embodiment, the present invention applies a first layer of photo-imagable material above a cathode portion of a flat panel display device. This embodiment then removes portions of the layer of photo-imagable material such that openings are formed therein. A layer of conductive material is then applied over the cathode such that conductive material is disposed within the openings in the layer of photo-imagable material. A dielectric layer of material is also disposed between the cathode and the bottom surface of the conductive material. This embodiment of the present invention then removes the layer of photo-imagable material such that at least a portion of the conductive focus waffle structure is formed disposed above the cathode.

Abstract: A flat-panel display including a substrate, a viewing screen, a non-conductive ring, many row conductive electrodes, conductive pads and column buses. The ring vacuum-seals a cavity between the substrate and the viewing screen. Coupled to one surface of the substrate, the row conductive electrodes have a conductivity that is higher than the conductive pads. Each pad is connected to one row electrode, and each pad extends through the ring to allow electrical coupling to its corresponding row electrode from outside the cavity while vacuum is maintained inside the cavity. The row electrodes are substantially parallel to each other, and are substantially perpendicular to the column buses. The conductive electrodes are protected from exposure to the ring. In one embodiment, the ring is a frit seal, the row conductive electrodes are made of aluminum, and the column buses and the pads are made of chromium.

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

Abstract: An electron-emitting device contains a vertical emitter resistor patterned into multiple laterally separated sections (34, 34V, 46, or 46V) situated between the electron-emissive elements (40), on one hand, and emitter electrodes (32), on the other hand. Sections of the resistor are spaced apart along each emitter electrode.

Abstract: Openings are created in a structure by a process in which a plate is furnished with a sacrificial patterned masking layer divided into multiple laterally separated mask portions. A primary layer of actinic material is provided over the masking layer and in space between the mask portions. Material of the primary layer not shadowed by a mask formed with the mask portions is backside exposed to actinic radiation. Material of the primary layer not exposed to the radiation is removed. Segments of the masking layer not covered by exposed material of the primary layer are then removed. Consequently, openings extend through the primary layer where the segments of the masking layer have been removed. The process is typically employed in forming an optical device such as a flat-panel cathode-ray tube display in which the openings in the primary layer receive light-emissive material.

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.