Abstract: A chemical vapor deposition system including a chemical vapor deposition chamber, an inlet line for directing reactant gases into the deposition chamber, and outlet line for discharging waste by-product from the deposition chamber, and a detachable trap position along the outlet line for trapping at least a portion of the waste by-product. The trap can include an array of baffles for increasing the surface area within the trap and disrupting flow within the trap. The trap can also include cooling structure for cooling at least a portion of the trap to enhance waste by-product deposition within the trap.

Abstract: A chemical vapor deposition system is provided. The chemical vapor deposition system is used to deposit an inorganic layer on a silicon wafer. The chemical vapor deposition system includes a reactor chamber, a particle trap, a gate valve, and a vacuum system. The vacuum system forces a gas out of the reactor chamber and through the particle trap and the gate valve. When the gate valve opens and closes, particles inside the valve can contaminate the reactor chamber and the vacuum system. The particle trap has a reservoir in which particles in the gas may become trapped before they reach the gate valve. The particle trap helps prevent the particles from becoming trapped in the gate valve.