Abstract: An example optical alignment target includes a translucent or transparent substrate having a bottom surface; an opaque material formed over the bottom surface in a pattern; an enclosed channel disposed below the bottom surface; and a fluid suspension contained in the enclosed channel. The pattern has an opaque portion of an opaque material and has a gap portion devoid of the opaque material. The fluid suspension includes a carrier liquid and a light emitting material suspended in the carrier liquid. The light emitting material is selected from the group consisting of quantum dots and cerium powder.

Abstract: The present disclosure relates to methods, systems and compositions directed to unspooling a substrate from a source coil and polishing a surface of the substrate, wherein before the polishing, the substrate includes depressions separated by interstices and a coating including a hydrogel disposed on the depressions and the interstices, and the polishing includes applying a slurry to the surface of the substrate and removing the hydrogel from the interstices but not the depressions by contacting the surface of the substrate with one or more polisher and introducing relative movement between the one or more polisher and the surface.

Abstract: An imprinting apparatus includes a silicon master and an anti-stick layer coating the silicon master. The silicon master includes a plurality of features positioned at an average pitch of less than about 425 nm, each of the plurality of features comprises a depression having an opening with its largest opening dimension being less than about 300 nm. The anti-stick layer includes a crosslinked silane polymer network.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An imprinting apparatus includes a silicon master and an anti-stick layer coating the silicon master. The silicon master includes a plurality of features positioned at an average pitch of less than about 425 nm, each of the plurality of features comprises a depression having an opening with its largest opening dimension being less than about 300 nm. The anti-stick layer includes a crosslinked silane polymer network.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: An inspection apparatus is provided that comprises an optical target including a solid host material and a fluorescing material embedded in the solid host material. The solid host material has a predetermined phonon energy HOSTPE. The fluorescing material exhibits a select ground energy level and a target excitation (TE) energy level separated from the ground energy level by a first energy gap corresponding to a fluorescence emission wavelength of interest. The fluorescing material has a next lower lying (NLL) energy level relative to the TE energy level. The NLL energy level is spaced a second energy gap FMEG2 below the TE energy level, wherein a ratio of the FMEG2/HOSTPE is three or more.

Abstract: A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering layer. Additionally, the donor wafer may possess a particle-confining region proximate the tensilely strained layer. The method also includes introducing particles into the donor wafer to a depth below the surface, and accumulating at least some particles within the tensilely strained gettering layer. Next, the method includes initiating a cleaving action so as to separate at least one of the material layers form the substrate. The tensilely strained gettering layer may accumulate particles and/or point defects and reduce the implantation dose and thermal budget required for cleaving.