Abstract: Vapor from liquid ethylene dibromide (EDB) functions in a manner superior anhydrous HCl for in situ gas phase etching of InP substrates in Metalorganic Vapor Phased Epitaxy (MOVPE). The etch rate and surface morphology behaviors have been determined for conditions useful as a substrate cleaning step prior to growth of InP and InGaAs epilayers. The thermally activated decomposition and etching are analogous to group III-V semiconductor growth processes; the behavior in different carrier gas mixtures demonstrates dependence on gas phase reactions in the heated vapor above the substrate.

Abstract: An apparatus for and a method of making heterojunction source-drain insulated gate field-effect transistors in order to obtain higher gain-bandwidth products at microwave frequencies. A semi-insulating InP semiconductor substrate is provided with a ternary alloy layer of p-type Ga.sub.0.47 In.sub.0.53 As, or optionally, an acceptor-doped p-type bulk of Ga.sub.0.47 In.sub.0.53 As can be substituted. Troughs are shaped in the substrate and layer for receiving a material lattice-matched to the n.sup.+ p-type Ga.sub.0.47 In.sub.0.53 As to perform as the source and drain contacts, n.sup.+ doped InP might be a suitable material. An optional method for forming the contacts calls for directing a stream of phosphine and hydrogen onto source and drain contact windows contacting the Ga.sub.0.47 In.sub.0.53 As which is heated to 750.degree. C. for about 15 minutes. This creates graded heterojunction source and drain contacts having a lattice-matching variable composition.

Abstract: An improved method of liquid phase epitaxial growth of III-V compound on an nP substrate by growing the epitaxial layer in an atmosphere of H.sub.2 with 10.sup.-5 to 10.sup.-4 mole fraction PH.sub.3.

Abstract: A light emitting diode with emission wavelength in the 1.06.mu.m region suitable for use with the 1.06.mu.m transmission window in optical fibers. The diode is fabricated by liquid phase epitaxial growth of p and n type InAs.sub.x P.sub.1-x layers on InP substrates.