Patents by Inventor Arthur R. Woll

Arthur R. Woll has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11333620
    Abstract: A high-pass x-ray filter device is disclosed that includes a substrate defining an elongated opening. A reflecting membrane is positioned across the opening and supported, along all sides, by the substrate. The reflecting membrane is configured to transmit, from an incident x-ray beam, x-ray photons having an energy above about a threshold energy level and reflects, from the incident x-ray beam, x-ray photons having an energy below about the threshold energy level. The elongated opening of the substrate defines an exit path for the transmitted x-ray beam. A high-pass x-ray filter system including the high-pass filter device and a method of fabrication of the high-pass filter device are also disclosed.
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: May 17, 2022
    Assignee: CORNELL UNIVERSITY
    Inventors: David N. Agyeman-Budu, Joel D. Brock, Arthur R. Woll
  • Publication number: 20210033544
    Abstract: A high-pass x-ray filter device is disclosed that includes a substrate defining an elongated opening. A reflecting membrane is positioned across the opening and supported, along all sides, by the substrate. The reflecting membrane is configured to transmit, from an incident x-ray beam, x-ray photons having an energy above about a threshold energy level and reflects, from the incident x-ray beam, x-ray photons having an energy below about the threshold energy level. The elongated opening of the substrate defines an exit path for the transmitted x-ray beam. A high-pass x-ray filter system including the high-pass filter device and a method of fabrication of the high-pass filter device are also disclosed.
    Type: Application
    Filed: August 3, 2020
    Publication date: February 4, 2021
    Inventors: David N. AGYEMAN-BUDU, Joel D. Brock, Arthur R. WOLL
  • Publication number: 20130216800
    Abstract: A method for forming a heterostructure includes forming a first perovskite crystal structure complex oxide material layer over a substrate to a first thickness. A second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer is formed upon the first perovskite crystal structure complex oxide material layer. When the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer reaches a critical thickness that may approximate one-half to one times the first thickness, the first perovskite crystal structure complex oxide material layer spontaneously transforms into a first brownmillerite crystal structure complex oxide material layer, with an attendant transfer of substantially one-half oxygen atom per perovskite unit cell to the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer, thus forming a second perovskite crystal structure oxygen enriched complex oxide oxygen getter material layer.
    Type: Application
    Filed: January 19, 2011
    Publication date: August 22, 2013
    Inventors: Joel D. Brock, David A. Muller, Lena Fitting Kourkoutis, Arthur R. Woll, John Ferguson