Abstract: A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlxGa1-xAs, AlxGa1-x-yInyAs, AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, AlxGa1-x-yInyAs1-z-cNzSbc, and AlxGa1-x-yInyAs1-z-cPzSbc, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.

Abstract: A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlxGa1-xAs, AlxGa1-x-yInyAs, AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, AlxGa1-x-yInyAs1-z-cNzSbc, and AlxGa1-x-yInyAs1-z-cPzSbc, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.

Abstract: A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlxGa1-xAs, AlxGa1-x-yInyAs, AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, AlxGa1-x-yInyAs1-z-cNzSbc, and AlxGa1-x-yInyAs1-z-cPzSbc, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.

Abstract: The heat insulation structure for a component of an exhaust system of a piston engine is arrangeable around the component such that an air space is formed between the component and the heat insulation structure, and includes an outer shell layer a middle shell layer that is arranged inside the outer shell layer, and a first inner shell layer that is arranged inside the middle shell layer. A first air gap is arranged between the outer shell layer and the middle shell layer, a first insulation layer is arranged between the middle shell layer and the first inner shell layer, and the outer shell layer is provided with venting apertures for natural ventilation of the first air gap.

Abstract: The heat insulation structure for a component of an exhaust system of a piston engine is arrangeable around the component such that an air space is formed between the component and the heat insulation structure, and includes an outer shell layer a middle shell layer that is arranged inside the outer shell layer, and a first inner shell layer that is arranged inside the middle shell layer. A first air gap is arranged between the outer shell layer and the middle shell layer, a first insulation layer is arranged between the middle shell layer and the first inner shell layer, and the outer shell layer is provided with venting apertures for natural ventilation of the first air gap.