Abstract: Disclosed preamplifier circuit comprises amplifier arranged in first current path between input node and output node of the preamplifier circuit. Feedback capacitor is arranged in second current path between said input and output nodes. Feedback circuit having adjustable transfer function is arranged in third current path between said input and output nodes. Reset switch arranged in said third current path enables selectively coupling output of the feedback circuit to input of the amplifier and decoupling output of the feedback circuit from input of the amplifier. Loop controller is arranged selectively, in dependence of voltage in the preamplifier circuit, one of open reset switch to set preamplifier circuit in normal operating mode and close reset switch to set preamplifier circuit in reset mode. Loop controller is arranged to adjust the transfer function of the feedback circuit at least in part in dependence of the current operating mode of the preamplifier circuit.

Abstract: In accordance with an example embodiment, a preamplifier circuit is provided, the preamplifier circuit comprising an amplifier arranged in a first current path between an input node and an output node of the preamplifier circuit; a feedback capacitor arranged in a second current path between said input node and said output node; a feedback circuit having an adjustable transfer function arranged in a third current path between said input node and said output node; a reset switch arranged in said third current path to enable selectively coupling the output of the feedback circuit to the input of the amplifier and decoupling the output of the feedback circuit from the input of the amplifier; and a loop controller arranged to selectively, in dependence of a voltage in the preamplifier circuit, one of open the reset switch to set the preamplifier circuit in a normal operating mode and close the reset switch to set the preamplifier circuit in a reset mode, wherein the loop controller is arranged to adjust the trans

Abstract: In some embodiments, a system includes a first assembly, a second assembly, and a connecting member. The first assembly includes a first electrode and a first adhesive portion. The first assembly is configured to be coupled to a surface of a patient via the first adhesive portion. The second assembly includes a second electrode and a second adhesive portion. The second assembly is configured to be coupled to the surface of the patient via the second adhesive portion. The connecting member has a first end coupled to the first assembly and a second end coupled to the second assembly. The connecting member is configured to transition between a first configuration and a second configuration and may be configured to be coupled to the surface of the patient via a third adhesive portion in both the first configuration and the second configuration.

Abstract: The invention relates to a method and system and microchip for determining impedance of a variable impedance component. The method comprises tuning a tunable oscillator over a predefined tuning range, the tunable oscillator having the variable impedance component coupled as a load thereof. The frequency response of the tunable oscillator is measured as a function of said tuning. Finally, the measured frequency response is analyzed for determining the impedance of the variable impedance component. The invention makes possible to manufacture smaller and simpler monolithic sensor microchips.

Abstract: The invention relates to a method and system and microchip for determining impedance of a variable impedance component. The method comprises tuning a tunable oscillator over a predefined tuning range, the tunable oscillator having the variable impedance component coupled as a load thereof. The frequency response of the tunable oscillator is measured as a function of said tuning. Finally, the measured frequency response is analyzed for determining the impedance of the variable impedance component. The invention makes possible to manufacture smaller and simpler monolithic sensor microchips.

Abstract: The invention relates to a semiconductor structure and a method for minimizing non-idealities in a semiconductor structure, in which a drain; a source, a floating gate (102) and at least one input (108) capacitively connected'to the floating gate (102) are disposed on a substrate (105) so as to form a v-MOSFET transistor. According to the invention, a conductive layer insulated from the floating gate (102) and at least partially superimposed on the gate (102) is formed in the semiconductor structure and the conductive layer is connected to a constant potential.