Patents by Inventor Artur Useinov

Artur Useinov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
    Patent number: 9871193
    Abstract: The present invention relates to magnetic random access memory (MRAM) storage devices based on multiferroic tunnel junctions in which ferroelectric polarization is used to control and manipulate the memory state. Invention methods include: (1) method of producing tunneling electroresistance (TER) effect in multiferroic tunnel junction (MFTJ) at finite bias; (2) method of controlling the TER effect in an MFTJ at infinite bias via the switching of the relative orientation of the ferromagnetic leads; (3) method of producing monotonous bias dependence of the tunneling magnetoresistance (TMR) in a MFTJ; (4) method of controlling the size and direction of the parallel spin transfer torque (STT) component and the perpendicular STT component across the MFTJ; (5) method of producing a monotonous bias dependence of the perpendicular STT component across an MFTJ; and (6) method of controlling the size and sign of the interlayer exchange coupling in an MFTJ.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: January 16, 2018
    Assignee: CALIFORNIA STATE UNIVERSITY, NORTHRIDGE
    Inventors: Nicholas Kioussis, Julian Velev, Alan Kalitsov, Artur Useinov
  • CONCEPTS FOR IMPROVED MAGNETIC RANDOM ACCESS MEMORY
    Publication number: 20160043307
    Abstract: The present invention relates to magnetic random access memory (MRAM) storage devices based on multiferroic tunnel junctions in which ferroelectric polarization is used to control and manipulate the memory state. Invention methods include: (1) method of producing tunneling electroresistance (TER) effect in multiferroic tunnel junction (MFTJ) at finite bias; (2) method of controlling the TER effect in an MFTJ at infinite bias via the switching of the relative orientation of the ferromagnetic leads; (3) method of producing monotonous bias dependence of the tunneling magnetoresistance (TMR) in a MFTJ; (4) method of controlling the size and direction of the parallel spin transfer torque (STT) component and the perpendicular STT component across the MFTJ; (5) method of producing a monotonous bias dependence of the perpendicular STT component across an MFTJ; and (6) method of controlling the size and sign of the interlayer exchange coupling in an MFTJ.
    Type: Application
    Filed: August 4, 2015
    Publication date: February 11, 2016
    Inventors: Nicholas Kioussis, Julian Velev, Alan Kalitsov, Artur Useinov